| PART |
Description |
Maker |
| 2731-20 |
S-Band 2700-3100 MHz; P(out) (W): 20; P(in) (W): 3; Gain (dB): 8.2; Vcc (V): 36; Pulse Width (µsec): 100; Duty Cycle (%): 10; Case Style: 55CR S BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| HAGC-60-140-40-5/5 HAGC-60-140-40-5/7 HAGC-60-140- |
120 MHz - 160 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 2.100 X 2.100 INCH, 0.750 INCH HEIGHT, MODULE
100 MHz - 180 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 2.100 X 2.100 INCH, 0.750 INCH HEIGHT, MODULE
20 MHz - 40 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 2.100 X 2.100 INCH, 0.750 INCH HEIGHT, MODULE
50 MHz - 90 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 2.100 X 2.100 INCH, 0.750 INCH HEIGHT, MODULE
140 MHz - 180 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ, Inc.
MITEQ INC
|
| 2SK3475 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications
VHF-and UHF-band Amplifier Applications
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| HOS-050 HOS-050A HOS-050C HOS-050G H0S050A883B |
OP-AMP, 0 uV OFFSET-MAX, 100 MHz BAND WIDTH, MBCY12
RES,Carbon Film,22Ohms,350WV,5 /-% Tol OP-AMP, 15000 uV OFFSET-MAX, 100 MHz BAND WIDTH, MBCY12
RES,Carbon Film,110Ohms,350WV,5 /-% Tol OP-AMP, 15000 uV OFFSET-MAX, 100 MHz BAND WIDTH, MBCY12
HOS-050G: Fast Setting Video Operational Amplifier Scanned Data Sheet (Rev. 0. 9/99) 居屋- 050G：快速设置视频运算放大器的扫描数据（版本0 / 99
Fast Settling Video Operational Amplifier
|
ANALOG DEVICES INC
Analog Devices, Inc.
|
| NE350184C NE350184C-T1 NE350184C-T1A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Laboratories
|
| FERD40H100STS |
100 V field-effect rectifier diode
|
STMicroelectronics
|
| 2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications
TRANSISTOR,MOSFET,N-CHANNEL,10V V(BR)DSS,3A I(D),RFMOD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba.
TOSHIBA[Toshiba Semiconductor]
|
| MRF19030 MRF19030R3 MRF19030SR3 |
RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| 3276 |
Wide-band Models from DC to 100 MHz
|
ASM GmbH
|
| 2SK3074 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF-BAND POWER AMPLIFIER
|
TOSHIBA
|
| 2SK3075 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF .BAND POWER AMPLIFIER
|
TOSHIBA
|
