| PART |
Description |
Maker |
| GB25XF120K |
1200V 25A Low Vce Non Punch Through IGBT in a Econo2 6Pack Package
|
International Rectifier
|
| GB10XF120K |
1200V 20A Low Vce Non Punch Through IGBT in a Econo2 6PACK Package
|
International Rectifier
|
| GB35XF120K |
1200V 35A Low Vce Non Punch Through IGBT in a Econo2 6Pack Package
|
International Rectifier
|
| IRG4PH50UD IRG4PH50 |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
|
IRF[International Rectifier]
|
| 6MBP25TEA120 |
1200V / 25A 6 in one-package
|
FUJI ELECTRIC HOLDINGS CO., LTD.
ETC[ETC]
|
| 6MBI25L-120 |
IGBT(1200V 25A)
|
Fuji Electric
|
| 7MBR25NF120 |
1200V / 25A / PIM
|
Fuji Electric
|
| IRG4PH40U |
41 A, 1200 V, N-CHANNEL IGBT, TO-247AC
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.43V, @Vge=15V, Ic=21A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 2.43V，@和VGE \u003d 15V的，集成电路\u003d 21A条）
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=2.43V @Vge=15V Ic=21A)
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| 7MBR25SA120 |
IGBT(1200V/25A/PIM)
|
FUJI[Fuji Electric]
|
| NCE25G120T |
1200V, 25A, Trench NPT IGBT
|
Wuxi NCE Power Semiconductor Co., Ltd
|
| 6MBP25VBA120-50 |
IGBT MODULE (V series) 1200V / 25A / IPM
|
Fuji Electric
|
