| PART |
Description |
Maker |
| SW15PCN040 |
Stud Base Silicon Rectifier Diodes
|
Westcode Semiconductors
|
| DP55 |
STUD-BASE SILICON RECTIFIER DIODES TYPE PCN/PCRO55 75AMPERES AVERAGE : UP TO 1600 VOLTS V-RRM
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
|
| SWXHHNXXX |
RECTIFIER DIODES STUD AND FLAT BASE TYPES
|
ETC
|
| SET030603 SET030604 SET030819 SET030803 SET030804 |
30 A, 400 V, SILICON, RECTIFIER DIODE
30 A, 1000 V, SILICON, RECTIFIER DIODE
DO4 STUD HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
|
http://
Semtech Corporation
|
| NTE5825 NTE5818 NTE5819 NTE5823 |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V.
Silicon Power Rectifier Stud Mount, Fast Recovery, 12 Amp
Silicon Power Rectifier Stud Mount Fast Recovery 12 Amp
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.
|
NTE[NTE Electronics]
|
| 300NS |
Standard Recovery Diodes (Stud and Flat Base Type)
|
Naina Semiconductor ltd.
|
| SKR320 D161-320 D161-320X 240U60 240UR160 SKN320 2 |
Standard Recovery Diodes (Stud and Flat Base Type)
|
Naina Semiconductor ltd.
Naina Semiconductor ltd...
|
| 2N6290 2N6473 2N6476 2N6293 2N6110 2N6107 2N6108 2 |
EPITAXIAL-BASE/ SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
SMA FEMALE POWER DIVIDER; NUMBER OF OUTPUT PORTS: 4; FREQUENCY RANGE: 0.5 - 1 GHz; MINIMUM ISOLATION: 20 dB; VSWR: 1.30 MAXIMUM; MAXIMUM INSERTION
EPITAXIAL-BASE SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS
|
Boca Semiconductor Corp.
BOCA[Boca Semiconductor Corporation]
|
| ISD380-9 ISD25-15 ISDF65-7 ISD320-16 ISDR320-22 IS |
380 A, 900 V, SILICON, RECTIFIER DIODE
25 A, 1500 V, SILICON, RECTIFIER DIODE
65 A, 700 V, SILICON, RECTIFIER DIODE
320 A, 1600 V, SILICON, RECTIFIER DIODE
320 A, 2200 V, SILICON, RECTIFIER DIODE
160 A, 1400 V, SILICON, RECTIFIER DIODE
65 A, 400 V, SILICON, RECTIFIER DIODE
380 A, 1300 V, SILICON, RECTIFIER DIODE
380 A, 1200 V, SILICON, RECTIFIER DIODE
380 A, 1500 V, SILICON, RECTIFIER DIODE
380 A, 600 V, SILICON, RECTIFIER DIODE
380 A, 400 V, SILICON, RECTIFIER DIODE
380 A, 500 V, SILICON, RECTIFIER DIODE
160 A, 900 V, SILICON, RECTIFIER DIODE
160 A, 1000 V, SILICON, RECTIFIER DIODE
160 A, 500 V, SILICON, RECTIFIER DIODE
|
|
| 2SC2484 2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A
SILICON EPITAXAL BASE VLESA TRANSISTOR
|
Panasonic Semiconductor
|
| 1N1341B 1N1585 1N1587 1N1068 1N1064 1N2232A 1N2232 |
SILICON POWER RECTIFIER 16 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 150 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 100 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 300 V, SILICON, RECTIFIER DIODE, DO-203AA
SILICON POWER RECTIFIER 16 A, 50 V, SILICON, RECTIFIER DIODE, DO-203AA
Standard Rectifier (trr more than 500ns)
N/A
SILICON POWER RECTIFIER
|
MICROSEMI CORP-LAWRENCE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| BYV118F BYV118F-35 BYV118F-40 BYV118F-45 BYV118X B |
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 10 A, 40 V, SILICON, RECTIFIER DIODE
DB-25 MALE CONN KIT CRIMP 10 A, 40 V, SILICON, RECTIFIER DIODE
CRIMP SHELLS DB25 MALE 10 A, 35 V, SILICON, RECTIFIER DIODE
Rectifier diodes Schottky barrier 10 A, 35 V, SILICON, RECTIFIER DIODE
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
|
