| PART |
Description |
Maker |
| MT58V1MV18D MT58L512Y36D MT58V512V32D MT58V512V36D |
16Mb SYNCBURST SRAM
|
Micron Technology
|
| ID245K01 |
16MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
| VG3617801BT-8H |
16Mb CMOS Synchronous Dynamic RAM
|
Vanguard International Semiconductor Corporation
|
| DS2070W-100 |
3.3V Single-Piece 16Mb Nonvolatile SRAM
|
Maxim Integrated Products, Inc.
|
| WED2DG472512V5D2 WED2DG472512V7D2 WED2DG472512V65D |
16MB (4x512Kx72) SYNC BURST-PIPELINE, DUAL KEY DIMM
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
|
| DS3070W-100 |
3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock 3.3V的单16Mb的非易失SRAM，带有时
|
Maxim Integrated Products, Inc.
|
| KMM5364005CK |
(KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
|
Samsung Semiconductor
|
| HFDOM40S3RXXX DOM40S3R016 DOM40S3R032 DOM40S3R048 |
40Pin Flash Disk Module Min.16MB ~ Max.512MB, True IDE Interface
|
HANBiT Electronics Co., Ltd.
HANBIT[Hanbit Electronics Co.,Ltd]
|
| AS8S512K32PEC-25_ET AS8S512K32PEC-25_IT AS8S512K32 |
16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| N16T1630C2BZ2-70 N16T1630C2B N16T1630C2BZ N16T1630 |
16Mb Ultra-Low Power Asynchronous CMOS SRAM 16Mb的超低功耗CMOS SRAM的异
From old datasheet system
|
Electronic Theatre Controls, Inc.
NANOAMP[NanoAmp Solutions, Inc.]
etc
|
| M30L0R8000B0 M30L0R8000B0ZAQ M30L0R8000B0ZAQE M30L |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
