| PART |
Description |
Maker |
| H27UBG8T2A |
32Gb NAND Flash
|
Hynix
|
| H27UBG8T2BTR-BC H27UCG8U5BTR-BC |
32Gb(4096M x 8bit) Legacy MLC NAND Flash
|
Hynix
|
| K9F4G08U0D |
4Gb D-die NAND Flash
|
Samsung
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0 |
From old datasheet system
EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC
32M x 8 Bit NAND Flash Memory
|
Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
|
| TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58D |
Flash - NAND
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| AT49F8011-70CI AT49F8011-90CI AT49F8011T-90CC AT49 |
ATS-SSK 0525/110
Quadruple 2-Input Positive-NAND Gate 14-SO -40 to 85
Quadruple 2-Input Positive-NAND Gate 14-SOIC -40 to 125
Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125
8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PBGA48
8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
Atmel Corp.
Atmel, Corp.
|
| KM29W8000IT |
1M x 8 Bit NAND Flash Memory(1M x 8 浣?NAND???瀛???ī
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY27UG088G5B HY27UG088GDB HY27UG088G5B-TIP |
8Gb NAND FLASH
FLASH 3.3V PROM, PDSO48 12 X 20 MM, 1.20 MM HEIGHT, PLASTIC, TSOP1-48
|
Hynix Semiconductor, Inc.
|
| HY27UF082G2A HY27UF162G2A HY27UF082G2A-TCB HY27UF0 |
2Gbit (256Mx8bit/128Mx16bit) NAND Flash
256M X 8 FLASH 3.3V PROM, 30 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
| K8A1215EZC |
512Mb C-die NOR FLASH
|
Samsung semiconductor
|
