| PART |
Description |
Maker |
| B25556-J3905-K003 |
MPK DC Capacitors GTO Clamping
|
EPCOS[EPCOS]
|
| C4DRFAQ5500AA0J C4DRHAQ5500AA0J C4DRMAQ4500AA0J C4 |
LOW INDUCTANCE CAPACITORS GTO APPLICATIONS
|
Kemet Corporation
|
| FG1800BH40 FG1800BH50 FG1000AL20 |
THYRISTOR|GTO|2KV V(DRM)|TO-200AF
THYRISTOR|GTO|2.5KV V(DRM)|TO-200AF
THYRISTOR|GTO|1KV V(DRM)|TO-200VAR56 晶闸管| GTO的| 1KV交五（DRM）的|00VAR56
|
Black Box, Corp.
|
| GM100DYXX |
GTO Modules
|
Powerex
|
| TC514102AJ-60 TC514102AP TC514102AP-60 TC514102ASJ |
T-NPN- SI-LO-NOISE
4,194,304 x 1 BIT DYNAMIC RAM
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:20Vrms; Peak Surge Current (8/20uS), Itm:250A; Clamping Voltage 8/20us Max :70V; Peak Energy (10/1000uS):1.5J; Package/Case:Radial Leaded; Clamping Voltage Max, Vc:70V
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
|
| GDM20830 |
Gate Turn-off (GTO) Thyristor Module
|
Powerex Power Semiconductors
|
| SG2500GXH21 |
800 A, 4500 V, SYMMETRICAL GTO SCR
|
|
| MBRF10100-G MBRF1030-G MBRF1040-G |
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=100V, V<sub>R</sub>=100V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=30V, V<sub>R</sub>=30V, I<sub>O</sub>=10A
Schottky Barrier Rectifiers Diodes, V<sub>RRM</sub>=40V, V<sub>R</sub>=40V, I<sub>O</sub>=10A
|
Comchip Technology
|
| BV03CW |
Low clamping voltage
|
Shenzhen Bencent Electr...
|
| SMS05 |
Low clamping voltage
|
Shanghai Leiditech Elec...
|
| ESDA14V2-1BF3 |
TVS Clamping Array
|
ST Microelectronics
|
