| PART |
Description |
Maker |
| PEB2046 PEB2046K PEB2046-NVA3 |
MTSS (Memory Time Switch Small)
From old datasheet system
Memory Time Switch Small (MTSS)
|
Infineon
|
| Q67100-H6238 Q67100-H6301 PEB2047 PEB2047-16 INFIN |
Memory Time Switch Large MTSL
|
Siemens Semiconductor G...
SIEMENS AG
|
| PEB2447-HV1.2 |
MTSXL (Memory Time Switch Extended La...
|
Infineon
|
| PEB2047 Q67100-H62 PEB2047-NV2.1 PEF2047-N-16V2.1 |
Memory Time Switch Large MTSL
|
SIEMENS[Siemens Semiconductor Group]
|
| Q67103-H6594 |
Memory Time Switch Extended Large MTSXL
|
SIEMENS AG
|
| AM29LV102B AM29LV102BB-120EC AM29LV102BB-120ECB AM |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory
IC SMT SRAM 128K X 8 70NS 5V SOP-32
SRAM; Memory Type:Asynchronous SRAM; Memory Size:1MB; Memory Configuration:64K x 16; Access Time, Tacc:10ns; Package/Case:44-TSOP-II; Operating Temp. Max:70 C; Operating Temp. Min:0 C RoHS Compliant: Yes
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区32引脚闪存
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
| AM29LV104BT-90JIB AM29LV104B AM29LV104BB-120EC AM2 |
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector 32-Pin Flash Memory
IC SMT S-RAM 128KX8 IS62C1024L
SWITCH KEYLOCK SPDT MOM 4A
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 4兆位12亩8位）.0伏的CMOS只，引导扇区32引脚闪存
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
|
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IDT7200L IDT7201LA IDT7202LA |
CMOS ASYCHRONOUS FIFO 256 x 9 Memory(CMOS异步先进先出256x 9位存储器)
CMOS ASYCHRONOUS FIFO 512 x 9 Memory(CMOS异步先进先出512x 9位存储器)
CMOS ASYCHRONOUS FIFO 1024 x 9 Memory(CMOS异步先进先出1024x 9位存储器) 的CMOS异步先进先出存储024 × 9的CMOS（异步先进先024x 9位存储器
|
Intersil Corporation
Intersil, Corp.
|
| AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
| TMM24256BP-20 TMM24256BP-17 TMM24256BF-20 TMM24256 |
200ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory
170ns; V(cc): -0.6 to 7V; V; 32,768 x 8-bit one time programmable read only memory
|
TOSHIBA
|
