| PART |
Description |
Maker |
| TLP591B07 TLP591B |
Telecommunication Programmable Controllers MOS Gate Driver MOS FET Gate Driver
|
Toshiba Semiconductor
|
| EE-SX913-R1M EE-SX914-C1J-R0.3M EE-SX911-C1J-R0.3M |
Meeting Customer Needs with Compact Sensors that Mount with M3 Screws
|
Omron Electronics LLC
|
| SI3035 SI3021-BS SI3021-KS SI3021-KT SI3024-KT SI3 |
3.3 V FCC/JATE DIRECT ACCESS ARRANGEMENT
3.3V FCC/JATE direct access arrangement, digital interface
3.3 V FCC/JATE DAA (Direct Access Arrangement) digital interface
|
Silicon Laboratories
|
| AT9933DB1 |
High Bright LED Driver IC Meeting Automotive Requirements
|
Supertex, Inc.
|
| TLP250 TLP250INV |
PHOTOCOUPLER GaAlAs IRED & PHOTO-IC
TRANSISTOR INVERTER INVERTERS FOR AIR CONDITIONER IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
TOSHIBA[Toshiba Semiconductor]
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| SI3068 SI3068-B-FS |
FCC EMBEDDED DIRECT ACCESS ARRANGEMENT
|
Silicon Laboratories Inc.
|
| CXD8813Q |
C-MOS GATE ARRAY
|
ETC
|
| CXD8862Q |
C-MOS GATE ARRAY
|
ETC
|
| MKW2021 |
Input Filter meets EN 55022,class A and FCC, level A
|
Total Power Internation...
|
| 3SK258 E001712 |
N CHANNEL DUAL GATE MOS TYPE (TV/ FM TUNER VHF RF AMPLIFIER APPLICATIONS)
From old datasheet system
N CHANNEL DUAL GATE MOS TYPE (TV, FM TUNER VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
