PART |
Description |
Maker |
NE3514S02-T1D NE3514S02-T1C NE3514S0213 |
HETERO JUNCTION FIELD EFFECT TRANSISTOR
|
California Eastern Labs
|
NE3505M04-T2 |
HETERO JUNCTION FIELD EFFECT TRANSISITOR
|
California Eastern Labs
|
VSMG3700 VSMG3700-GS08 VSMG3700-GS18 VSMG370010 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSFF6210-09 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHF5410 TSHF541009 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
|
http:// Vishay Siliconix
|
TSHG640009 |
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
TSHA5503 TSHA550 TSHA5500 TSHA5501 TSHA5502 |
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
|
VISAY[Vishay Siliconix]
|
NE350184C NE350184C-T1A NE350184C-T1 NE350184C-A |
HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Labs CEL
|
TSHF6210-CS21 |
TSHF6210 - High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
|
Vishay Semiconductors
|
TSHF4410 |
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|