| PART |
Description |
Maker |
| PAK-VI |
310 Ivy Glen Court
|
Electronic Theatre Controls, Inc.
|
| PAK-VA |
310 Ivy Glen Court
|
Electronic Theatre Controls, Inc.
|
| HCP-72I1 |
High Availability Hybrid Network Security Appliance with Two Mainboard with Intel? Xeon? E5-2600 v2 processors (Ivy Bridge) and 3 Networking I/O blades
|
List of Unclassifed Man...
|
| SR310 |
310.00 MHz One-Port SAW Resonator
|
http://
|
| 2N7002PW115 2N7002PW |
60 V, 310 mA N-channel Trench MOSFET
|
NXP Semiconductors N.V.
|
| TC0268A |
SAW Resonator 310 MHz SMD 3.8X3.8 mm
|
TAI-SAW TECHNOLOGY CO., LTD.
|
| NX5322EH NX5322EK NX5322 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
|
NEC
|
| NX5330SA NX5330SA-AZ |
1 310 nm InGaAsP MQW-FP LASER DIODE FOR OTDR APPLICATIONS
|
California Eastern Labs
|
| NX5321 NX5321EK-AZ NX5321EH-AZ |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX5315EH_06 NX5315EH NX5315EH-AZ NX5315EH06 |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| NX6308GH NX6308GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| R463I333050N0K |
Capacitor, film, 0.33 uF, /-10% Tol, -40/ 110C, Safety: X2, 310 VAC, Lead Spacing=15 mm
|
Kemet Corporation
|
