PART |
Description |
Maker |
RJK03M4DPA-00-J5A RJK03M4DPA-15 |
30V, 35A, 4.6mΩmax.N Channel Power MOS FET 30V, 35A, 4.6mΩmax. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
FDS8858CZ |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Dual N & P-Channel PowerTrench㈢ MOSFET N-Channel: 30V, 8.6A, 17.0mヘ P-Channel: -30V, -7.3A, 20.5mヘ
|
Fairchild Semiconductor
|
2SJ325 2SJ325-Z-E2 2SJ325-Z-E2JM 2SJ325-Z-T1 2SJ32 |
P-channel enhancement type SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-252VAR
|
NEC Corp.
|
2SK2137 |
V(dss): 600V; V(gss): 30V; I(d): 4A; 30W; switching N-channel power MOSFET. For industrial use MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
FDB7030BLS FDP7030BLS FDB7030BLSL86Z |
56 A, 30 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 30V N-Channel PowerTrench?SyncFET 30V N-Channel PowerTrenchÒ SyncFET™ 30V N-Channel PowerTrench㈢SyncFET⑩ 30V N-Channel PowerTrench SyncFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
MSP2303 |
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
|
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MSN2306 |
30V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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RJK03M6DPA RJK03M6DPA-00-J5A |
30V, 30A, 9.4m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03E9DPA RJK03E9DPA-00-J5A |
30V, 35A, 4.3m max N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
FDB8160 FDB8160-F085 FDB8160F085 |
30V N-Channel PowerTrenchMOSFET N-Channel PowerTrench? MOSFET 30V, 80A, 1.8mΩ
|
Fairchild Semiconductor
|
FDB887010 FDB8870F085 FDB8870-F085 |
30V N-Channel PowerTrenchMOSFET N-Channel PowerTrench? MOSFET 30V, 160A, 3.9mΩ
|
Fairchild Semiconductor
|