| PART |
Description |
Maker |
| AF2301P AF2301PW AF2301PWA AF2301PWLA AF2301PWL |
V(ds): -20V; V(gs): -8V; -2.3A; 20V P-channel enchancement mode MOSFET
20V P-Channel Enhancement Mode MOSFET
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41 RoHS Compliant: No
MS27467T21B41S
|
Anachip Corp
ETC
|
| IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的（不适用沟道的HEXFET功率马鞍山场效应管）
N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
|
International Rectifier, Corp.
|
| MSP2321 |
-20V(D-S) P-Channel Enhancement Mode Power MOS FET
|
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|
| MSC0207GE |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
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|
| MSC0206W |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
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|
| MSC0207W |
-20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
|
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|
| MSC0211GE |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
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|
| FDG6332CF085 |
700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench? MOSFETs
20V N & P-Channel PowerTrench?MOSFETs
|
FAIRCHILD SEMICONDUCTOR CORP
|
| CDBW120-G |
Schottky Barrier Rectifiers Diodes, V-RRM=20V, V-R=20V, I-O=1A
|
Comchip Technology
|
| FDMA420NZ FDMA420NZ08 |
Single N-Channel 2.5V Specified PowerTrench? MOSFET 20V, 5.7A, 30mΩ
Single N-Channel 2.5V Specified PowerTrench垄莽 MOSFET 20V, 5.7A, 30m楼?
|
Fairchild Semiconductor
|
| ZXMN2B14FHTA ZXMN2B14FH |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY
20V SOT23 N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
