PART |
Description |
Maker |
29LV160C-55R 29LV160C-70 29LV160C-90 MX29LV160CTMI |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PBGA48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 70 ns, PDSO44 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PDSO44 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PDSO48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 70 ns, PBGA48 16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
|
Macronix International Co., Ltd. PROM MACRONIX INTERNATIONAL CO LTD
|
MBM29DL161BE MBM29DL161BE-12 MBM29DL161BE-70 MBM29 |
16M (2MX8/1MX16) BIT DUAL OPERATION 16M (2M X 8/1M X 16) BIT Dual Operation
|
FUJITSU[Fujitsu Media Devices Limited]
|
MX29LV160CTXBI-70 MX29LV160CBXBC-90G MX29LV160CBXB |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
Macronix International http://
|
LY62L102616ALL-55SL |
16M Bits ( 2Mx8 / 1Mx16 Switchable) LOW POWER CMOS SRAM
|
Lyontek Inc.
|
KM23C16205DSG |
16M-Bit (1Mx16 /512Kx32) CMOS MASK ROM(16M(1Mx16 /512Kx32) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
29LV017B-70 29LV017B-90 |
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1,600位[2Mx8] CMOS单电V时仅闪存
|
Macronix International Co., Ltd.
|
BS616LV1615 BS616LV1615FIP70 BS616LV1615FC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit 非常低功电压CMOS SRAM00万16 Asynchronous 16M(1Mx16) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
BS616LV1611 BS616LV1611FIP70 BS616LV1611FC BS616LV |
Asynchronous 16M(1Mx16) bits Static RAM From old datasheet system Very Low Power/Voltage CMOS SRAM 1M X 16 bit 非常低功电压CMOS SRAM00万16
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
HYE18P16161ACL85 HYE18P16161AC HYE18P16161AC-70 HY |
Specialty DRAMs - 1Mx16, VFBGA-48; Available 2Q04 Specialty DRAMs - 1Mx16, VGBGA-48; Available 2Q04 16M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|
AS4C1M16E5 |
5V / 3.3V Edo DRAM, 16M, 1Mx16
|
ALLIANCE
|
A82DL1642 A82DL16X2T A82DL1622 A82DL1632 A82DL1632 |
Reed Switch; Pull-In Amp Turns Max:25; Pull-In Amp Turns Min:16; Circuitry:SPST-NO; Switching Current Max:1A; Switching Voltage Max:200VDC; Mounting Type:PCB; Body Length:13.5mm; Breakdown Voltage Min:250VDC Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装(MCP)闪存和SRAM,A82DL16x2T(ü)16兆位Mx8 Bit/1Mx16位)的CMOS 3.3伏只,同时闪电行
|
AMIC Technology Corporation AMIC Technology, Corp.
|