PART |
Description |
Maker |
IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBH16N170A IXBT16N170A |
Discrete IGBTs High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
IXBF12N300 |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBT24N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBT10N170 IXBH10N170 |
Discrete IGBTs High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
ECN3067 |
High Voltage Monolithic IC
|
Renesas Technology
|
ECN3022 |
High Voltage Monolithic IC
|
Hitachi
|
TPD4113K07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4104AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
LT3511HMSPBF LT3511HMSTRPBF |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
LT3511 LT3575 LT3573 LT3574 LT3956 LT3957 |
Monolithic High Voltage Isolated Flyback Converter No External Start-Up Resistor
|
Linear Technology
|
IXBH9N140G IXBH9N160G |
Discrete IGBTs High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|