| PART |
Description |
Maker |
| DS1646-120 DS1646P-120 |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1745Y-150-IND DS1745YLPM-150-IND |
NVRAM (Battery Based) NVRAM中（基于电池
|
Maxim Integrated Products, Inc.
|
| DS1250Y-70 DS1250Y-70-IND DS1250Y-100-IND DS1250AB |
NVRAM (Battery Based)
From old datasheet system
NOVRAM,512KX8,CMOS,DIP,32PIN,PLASTIC
|
Dallas Semiconductor Corp
|
| M41ST87W M41ST87WMX6F M41ST87Y M41ST87YSS6F M41ST8 |
5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM
|
STMicroelectronics
|
| M40Z111 M40Z111MH6 M40Z111MH6TR M40Z111WMH6 M40Z11 |
NVRAM CONTROLLER FOR UP TO TWO LPSRAM
5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| GN01096B |
GaAs IC(with built-in ferroelectric)
|
Panasonic Semiconductor
|
| GN02035B |
GaAs IC(with built-in ferroelectric)
|
Panasonic Semiconductor
|
| MB85R256PFTN MB85R256PF MB85R256 |
Memory FRAM(Ferroelectric Random Access Memory)
|
Fuji Electric
Fujitsu Component Limited.
|
| STK10C68-L45M STK10C68-L55M |
NVRAM (EEPROM Based)
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:80mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:80mA NVRAM中（EEPROM的基础
|
Electronic Theatre Controls, Inc.
|
| M40Z300MQ |
NVRAM CONTROLLER for up to EIGHT LPSRAM
|
ST Microelectronics
|
| M40SZ100W M40SZ100Y |
NVRAM SUPERVISOR FOR LPSRAM
|
ST Microelectronics
|
