| PART |
Description |
Maker |
| ZHMA2901 ZHMA2911 |
Diode Array Diode Array; Case Size: 19x9 mm; Packaging: Bulk 0.1 A, 40 V, 6 ELEMENT, SILICON, SIGNAL DIODE
Diode Array Diode Array 0.1 A, 40 V, 8 ELEMENT, SILICON, SIGNAL DIODE
|
Bourns, Inc.
Nichicon, Corp.
|
| Q62702-A693 BAV74 |
From old datasheet system
Silicon Switching Diode Array (For high-speed switching Common cathode)
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Q62702-A1097 BAV70S Q62702-A109 |
From old datasheet system
Silicon Switching Diode Array (For high speed switching applications Common cathode)
|
SIEMENS[Siemens Semiconductor Group]
|
| S8-4150E3 S8-4148E3 S8-4150 S8-4148 S8-4150TR S8-4 |
UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
Switching Diode Array
|
MICROSEMI CORP-SCOTTSDALE
Microsemi Corporation
|
| BAV99BRW08 BAV99BRW-7-F |
QUAD SURFACE MOUNT SWITCHING DIODE ARRAY 0.15 A, 75 V, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| BAS16S Q62702-A1241 |
From old datasheet system
Silicon Switching Diode Array (For high-speed switching applications Internal (galvanic) isolated Diodes in one package)
|
SIEMENS[Siemens Semiconductor Group]
|
| BAV70 Q68000-A6622 |
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BCR119S Q62702-C2415 Q62702-A1215 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) PIN二极管（高压电流控制的射频衰减器RF电阻和开关高 MHz频率范围
NPN Silicon Digital Transistor Array (Switching circuit inverter interface circuit driver circuit)
From old datasheet system
NPN Silicon Digital Transistor Array (Switching circuit, inverter, interface circuit, driver circuit)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BAV99U |
Silicon Switching Diode Array(硅开关二极管阵列，高速开关应
|
SIEMENS AG
|
| ZHMA0426 |
Diode Array Diode Array 0.1 A, 40 V, 8 ELEMENT, SILICON, SIGNAL DIODE
|
Nichicon, Corp.
|
