| PART |
Description |
Maker |
| HM5118165LJ-5 HM5118165LJ-7 HM5118165TT-7 HM511816 |
16M EDO DRAM (1-Mword x 16-bit) 1 k Refresh
1M X 16 EDO DRAM, 50 ns, PDSO44
1M X 16 EDO DRAM, 60 ns, PDSO44
|
Hitachi,Ltd.
|
| HM51W18165TT-7 HM51W16165J-5 HM51W18165LJ-7 HM51W1 |
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh 16米EDO公司的DRAM - Mword 16位）4亩刷 1亩刷
16 M EDO DRAM (1-Mword 16-bit) 4 k Refresh/1 k Refresh 16米EDO公司的DRAM1 - Mword 16位）4亩刷 1亩刷
|
Hitachi,Ltd.
|
| HM5113165FLTD-6 HM5113165LTD-6 |
128M EDO DRAM (8-Mword × 16-bit) 4k refresh
128M EDO DRAM (8-Mword 隆驴 16-bit) 4k refresh
|
Elpida Memory
|
| HM5117405LS-5 HM5117405LS-6 HM5117405LS-7 HM511740 |
16 M EDO DRAM (4-Mword 垄楼 4-bit) 4 k Refresh/2 k Refresh
16 M EDO DRAM (4-Mword ′ 4-bit) 4 k Refresh/2 k Refresh
|
Elpida Memory
|
| HM5165405FLTT-5 HM5165405FLTT-6 HM5164405FTT-5 HM5 |
64 M EDO DRAM (16-Mword × 4-bit) 8 k Refresh/4 k Refresh
64 M EDO DRAM (16-Mword 隆驴 4-bit) 8 k Refresh/4 k Refresh
|
http://
Elpida Memory
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| HM5112805FLTD-6 HM5112805F-6 |
128M EDO DRAM (16-Mword x 8-bit) 8k refresh/4k refresh
|
http://
Hitachi,Ltd.
|
| HM5165805F HM5165805FJ HM5164805FLJ HM5165805FTT H |
64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh 64目等内存 Mword × 8位）8亩刷 4亩刷
(HM5164805F / HM5165805F) 64 MEDO DRAM (8-Mword X 8-bit) 8 k Refresh/4 k Refresh
|
http://
Hitachi Semiconductor
Hitachi,Ltd.
|
| HYB314405BJL-70 HYB314405BJL-60 HYB314405BJL-50 HY |
1M x 4 Bit EDO DRAM 3.3 V 50 ns
1M x 4 Bit EDO DRAM 3.3 V 60 ns
-1M x 4-Bit Dynamic RAM
1M x 4 Bit EDO DRAM 3.3 V 70 ns
1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834 |
8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hynix Semiconductor, Inc.
NXP Semiconductors N.V.
|
| AS4C4M4E1-50JC AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4 |
4M X 4 EDO DRAM, 60 ns, PDSO24
x4 EDO Page Mode DRAM
|
ALLIANCE SEMICONDUCTOR CORP
|
