| PART |
Description |
Maker |
| EDI7F341MV EDI7F341MV150BNC EDI7F2341MV120BNC |
1 Meg x 32 Flash Module(1Megx32闪速存储器模块(存取时间12050ns
EEPROM
|
White Electronic Designs Corporation
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
| MT48H16M32LF MT48H16M32LFCJ-75 MT48H16M32LFCJ-75IT |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
MICRON[Micron Technology]
|
| MT16D232X |
1 Meg / 2 Meg x 32 DRAM Module
|
Micron Technology
|
| MT4LDT464AG MT4LDT264AG MT4LDT164AG |
4 Meg x 64 Nonbuffered DRAM DIMMs(4 M x 64无缓冲动态RAM双列直插存储器模
1 Meg x 64 Nonbuffered DRAM DIMMs(1M x 64无缓冲动态RAM双列直插存储器模 1梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块
2 Meg x 64 Nonbuffered DRAM DIMMs(2M x 64无缓冲动态RAM双列直插存储器模 2梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块
|
Micron Technology, Inc.
|
| MT4C40005 MT4C40004 |
4 MEG x 4 DRAM
|
MICRON[Micron Technology]
|
| AM29DL323GB70WMI AM29DL322GT70WMI AM29DL322GT90EI |
32 megabit CMOS 3.0 volt-only, simultaneous operation flash memory 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
IC Flash Mem PARL 2.7v To 3.6v 32-MBit 2M x 16/4mx8 70ns 48FBGA 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
IC,MEM,FLASH,2MX16,3V,90NS,SIMUL 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| MT4LC4M16N MT4LC4M16R MT4LC4M16R6 MT4LC4M16R6TG-6S |
4 MEG x 16 EDO DRAM
|
MICRON[Micron Technology]
|
| 27C210 |
1 MEG CMOS EPROM (64K x 16)
|
Philips
|
| MSM5117100 |
16 MEG X 1-BIT DYNAMIC RAM
|
OKI electronic components
OKI electronic componets
|
| RM10R-10K-J |
SURFACE MOUNT RM Series: 1W Thru 10 Meg RESISTORS W
|
RFE international
|
