| PART |
Description |
Maker |
| SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式的EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| EN29LV512-45RSIP EN29LV512-45RTCP EN29LV512-55TIP |
512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory 512千位4K的8位）统一部门.0伏的CMOS只闪
|
Electronic Theatre Controls, Inc.
Eon Silicon Solution Inc.
|
| M27V512-200N1 M27V512 |
NND - 512 KBIT (64KB X8) LOW VOLTAGE UV EPROM AND OTP EPROM
64K X 8 OTPROM, 200 ns, PDSO28
|
ST Microelectronics
STMICROELECTRONICS
|
| GLT41116-30J4 GLT41116-45J4 |
30ns; 64K x 16 CMOS dynamic RAM with fast page mode
45ns; 64K x 16 CMOS dynamic RAM with fast page mode
|
G-LINK Technology
|
| UHR-5/4000-D48 UHR-12/1650-D48 UHR-12/1650-D12 UHR |
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 型DC - DC电压转换
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 型DC - DC电压转换
|
EEPROM
NIC Components, Corp.
PLX Technology, Inc.
|
| M24512-WMW6TP M24256-BR M24256-BRDW6G M24256-BRDW6 |
512 Kbit and 256 Kbit Serial I2C bus EEPROM with three Chip Enable lines
|
STMICROELECTRONICS[STMicroelectronics]
|
| T221160A-35S T221160A-30J T221160A T221160A-30S T2 |
64K x 16 DYNAMIC RAM FAST PAGE MODE 64K的16动态RAM快速页面模
|
TM Technology, Inc.
TMT[Taiwan Memory Technology]
|
| KM4164B KM4164B-10 KM4164B-12 KM4164B-15 |
64K X 1 BIT DYNAMIC RAM WITH PAGE MODE 64K的1位动态内存页面模
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| GLT41316-50FA GLT41316-50FB GLT41316-50FC GLT41316 |
64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
|
etc
|
| IC41C1664 IC41LV1664 IC41C1664-25K IC41C1664-25KI |
64K x 16 bit Dynamic RAM with EDO Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
| AT28BV64B-20SC AT28BV64B-20SI AT28BV64B-20TC AT28B |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
|
Atmel
|
| SST27SF010 SST27SF010-70 SST27SF010-70-3C-NG SST27 |
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash
|
SST[Silicon Storage Technology, Inc]
SST[Silicon Storage Technology Inc]
|
