| PART |
Description |
Maker |
| IRL3102 IRL3102L |
Advanced Process Technology
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)=0.013ohm, Id=61A)
|
IRF[International Rectifier]
|
| IRFL024NPBF IRFL024NPBF-15 |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFI1010NPBF IRFI1010NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| SFW9530 SFI9530 |
Advanced Power MOSFET 10.5 A, 100 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SFS9540 |
Advanced Power MOSFET 10.7 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SFS9Z34 |
Advanced Power MOSFET 12 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRF610A |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRFL024 IRFL024N IRFL024NTRPBF IRFL024NTR |
Surface Mount
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V Rds(on)=0.075ohm Id=2.8A)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管)
Advanced Process Technology
|
IRF[International Rectifier]
|
| IRFS840A |
N-Channel Power MOSFET00V.85Ω.6AN沟道功率MOS场效应管（漏源电00V，导通电.85Ω，漏电流4.6A 4.6 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET
Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRFS530 IRFS530A IRFS530ANL |
N-CHANNEL POWER MOSFET
Advanced Power MOSFET
100V N-Channel A-FET / Substitute of IRFS530
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRLWI540A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRLWI610A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
