| PART |
Description |
Maker |
| K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9 |
64M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MBM30LV0064 MBM30LV0064-PFTN MBM30LV0064-PFTR |
FLASH MEMORY 64M (8M x 8) BIT NAND-type
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| K9K1208U0M-YIB0 K9K1208U0M-YCB0 |
64M x 8 Bit NAND Flash Memory 6400 × 8位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K5P6480YCM-T085 |
64M Bit (8Mx8) Nand Flash Memory / Data Sheet
|
Samsung Electronic
|
| K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
|
| HY27UA081G1M HY27SA1G1M HY27SA161G1M-TPCB |
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
64M X 16 FLASH 1.8V PROM, 12000 ns, PDSO48
|
Hynix Semiconductor Inc.
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| MBM29LV651UE12TR MBM29LV650UE12TR MBM29LV650UE-12 |
FLASH MEMORY 64M (4M x 16) BIT
|
Fujitsu Microelectronics
|
| W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
