PART |
Description |
Maker |
8P4M 8P2M 8P4M-AZ 8P2M-AZ |
12 A, 200 V, SCR, TO-220AB PLASTIC PACKAGE-3 12 A, 400 V, SCR, TO-220AB PLASTIC PACKAGE-3 8 A THYRISTOR
|
Vishay Beyschlag NEC Corp. NEC[NEC]
|
BT152-400R BT152-400R127 BT152-600R127 |
Thyristors - I<sub>GT</sub>: 32 mA; I<sub>T</sub> (R<sub>MS</sub>): 20 A; V<sub>DRM</sub>: 650 V; Package: SOT78 (TO-220AB); Container: Tube pack Thyristors - I<sub>GT</sub>: 32 mA; I<sub>T</sub> (R<sub>MS</sub>): 20 A; V<sub>DRM</sub>: 450 V; Package: SOT78 (TO-220AB); Container: Tube pack From old datasheet system
|
NXP SEMICONDUCTORS
|
IRF9Z24 |
11 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB -60V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
KF80N08P |
TO-220AB PACKAGE
|
http://
|
KMB075N75P |
TO-220AB PACKAGE
|
KEC(Korea Electronics)
|
IRGBC30S |
600V Discrete IGBT in a TO-220AB package
|
International Rectifier
|
IRGB6B60KPBF |
600V UltraFast 10-30 kHz IGBT in a TO-220AB package
|
International Rectifier
|
IRFBC20 |
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A) 600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
IRF[International Rectifier]
|
30CTH02FP |
200V 20A HyperFast Discrete Diode in a TO-220AB package
|
International Rectifier
|
IRG4BC20UD IRG4BC20UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
|
International Rectifier
|