| PART |
Description |
Maker |
| CAT28C256P-25 CAT28C256PI-25 CAT28C256T13I-25 CAT2 |
128Kx8 EEPROM 128Kx8 EEPROM
x8EEPROM
|
Renesas Electronics, Corp.
Epson (China) Co., Ltd.
YEONHO Electronics Co., Ltd.
|
| CAT28C256P-12 CAT28C256P-15 CAT28C256PA-12 CAT28C2 |
128Kx8 EEPROM 128Kx8 EEPROM
x8EEPROM
|
Atmel, Corp.
Lighting Components and Design, Inc.
|
| AS29P200 AS29F200B-120SC AS29F200B-70TC AS29F200B- |
5V 256K x 8 / 128K x 16 CMOS Flash EEPROM
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 120ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 70ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns
5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 90ns
|
Alliance Semiconductor
|
| MX29F004BQC-70 MX29F004BQC-12 MX29F004BQC-90 MX29F |
x8 Flash EEPROM
4M-BIT [512KX8] CMOS FLASH MEMORY 512K X 8 FLASH 5V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| HY29F080G-70 HY29F080G-12 HY29F080T-70 HY29F080R-9 |
x8 Flash EEPROM 1M X 8 FLASH 5V PROM, 90 ns, PDSO40
8 Megabit (1M x 8), 5 Volt-only, Flash Memory 8兆位米8），5伏只，闪
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| AS29LV800T-90TI AS29LV800 AS29LV800B-120SC AS29LV8 |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 120ns access time
3V 1M】8/512K】16 CMOS Flash EEPROM
3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time
|
ANADIGICS[ANADIGICS, Inc]
Alliance Semiconductor
|
| BM29F400T-15TC BM29F400T-90TC BM29F400T-12TC |
x8/x16 Flash EEPROM
256K X 16 FLASH 5V PROM, 120 ns, PDSO48
|
WINBOND ELECTRONICS CORP
|
| LH28F160S5HB-L70 LH28F160S5HB-L10 LH28F160S5HD-L10 |
1M X 16 FLASH 5V PROM, 80 ns, PDSO56 0.600 INCH, PLASTIC, SSOP-56
x8/x16 Flash EEPROM x8/x16闪存EEPROM
|
Sharp Electronics, Corp.
Sharp, Corp.
|
| HY29LV160 HY29LV160BF-12 HY29LV160BF-12I HY29LV160 |
IC,EEPROM,NOR FLASH,1MX16/2MX8,CMOS,TSSOP,48PIN,PLASTIC
16 Mbit (2M x 8/1M x 16) Low Voltage Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| SST29EE010-70-4C-UH SST29VE010-70-4C-UH SST29LE010 |
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1 Mbit (128K x8) Page-Mode EEPROM 1兆位128K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 1兆位28K的8）页模式的EEPROM
1 Mbit (128K x8) Page-Mode EEPROM 128K X 8 FLASH 2.7V PROM, 200 ns, PDSO32
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| P28F010 28F010 29066301 |
IC,EEPROM,FLASH,128KX8,CMOS,DIP,32PIN,PLASTIC
5 Volt Bulk Erase Flash Memory
From old datasheet system
|
intel
|
| PIC16LF628A-E/ML PIC16LF628A-E/P PIC16LF628A-E/SO |
FLASH-Based 8-Bit CMOS Microcontrollers
8-bit CMOS microcontroller, FLASH=1024 word, RAM=224b, EEPROM=128b, 20MHz
8-bit CMOS microcontroller, FLASH=2048 word, RAM=224b, EEPROM=128b, 20MHz
8-bit CMOS microcontroller, FLASH=4096 word, RAM=256b, EEPROM=256b, 20MHz
|
Microchip
|
