| PART |
Description |
Maker |
| BF450 BF451 |
(BF450 / BF451) HF Silicon Planar Epitaxial Transistor
|
Philips Semiconductors
NXP
|
| MJD44H11 MJD44H11-001 MJD45H11-001 MJD45H11T4G MJD |
SILICON POWER TRANSISTORS 8 A, 80 V, NPN, Si, POWER TRANSISTOR
Power 10A 80V PLA NPN
Power 10A 80V PLA PNP
|
ONSEMI[ON Semiconductor]
|
| CX28394-22 CX28395-18 CX28395-19 CX28394 CX28395 C |
Ultraframer DS3/E3/DS2/E2/DS1/E1/DS0 DATACOM, FRAMER, PQFP128
DIODE SWITCHING DUAL ISOLATED 70V 250mA-Io 150mW 4ns-trr SOT-563 3K/REEL
POT 5K OHM 12MM VERT PLA BUSHING
DIODE SWITCH 75V 200MW SOT323
DIODE SWITCHING SINGLE 70V 250mA-Io 200mW 4ns-trr SOT-323 3K/REEL
Quad/x16/OctalT1/E1/J1 Framers
Quad/x16/Octal?T1/E1/J1 Framers
Quad/x16/Octal-T1/E1/J1 Framers
|
Conexant Systems, Inc.
|
| A-70567-0349 15-80-1221 0015801221 |
2.54mm (.100) Pitch C-Grid庐 Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 22 Circuits, 0.76渭m (30渭) Gold, (Au) Selective Pla
2.54mm (.100) Pitch C-Grid? Header, Through Hole without Peg, Dual Row, Vertical, Shrouded, High Temperature, 22 Circuits, 0.76μm (30μ) Gold, (Au) Selective Plating
|
Molex Electronics Ltd.
|
| A-70280-0280 010-87-9805 |
2.54mm (.100") Pitch C-Grid庐 Breakaway Header, Dual Row, Vertical, High Temperature, 80 Circuits, 0.76渭m (30渭") Gold (Au) Selective Plating, Tin(Sn) PC Tail Pla
2.54mm (.100) Pitch C-Grid? Breakaway Header, Dual Row, Vertical, High Temperature, 80 Circuits, 0.76μm (30μ) Gold (Au) Selective Plating, Tin(Sn) PC Tail Plating, 2.72mm (.107) PC Tail
|
Molex Electronics Ltd.
|
| CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8
80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial
80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| ISD380-9 ISD25-15 ISDF65-7 ISD320-16 ISDR320-22 IS |
380 A, 900 V, SILICON, RECTIFIER DIODE
25 A, 1500 V, SILICON, RECTIFIER DIODE
65 A, 700 V, SILICON, RECTIFIER DIODE
320 A, 1600 V, SILICON, RECTIFIER DIODE
320 A, 2200 V, SILICON, RECTIFIER DIODE
160 A, 1400 V, SILICON, RECTIFIER DIODE
65 A, 400 V, SILICON, RECTIFIER DIODE
380 A, 1300 V, SILICON, RECTIFIER DIODE
380 A, 1200 V, SILICON, RECTIFIER DIODE
380 A, 1500 V, SILICON, RECTIFIER DIODE
380 A, 600 V, SILICON, RECTIFIER DIODE
380 A, 400 V, SILICON, RECTIFIER DIODE
380 A, 500 V, SILICON, RECTIFIER DIODE
160 A, 900 V, SILICON, RECTIFIER DIODE
160 A, 1000 V, SILICON, RECTIFIER DIODE
160 A, 500 V, SILICON, RECTIFIER DIODE
|
|
| IR180DR-G06PBF IR150DR-G08PBF IR150DR-G04PBF IR180 |
25 A, 600 V, SILICON, RECTIFIER DIODE
16 A, 800 V, SILICON, RECTIFIER DIODE
16 A, 400 V, SILICON, RECTIFIER DIODE
25 A, 200 V, SILICON, RECTIFIER DIODE
25 A, 1000 V, SILICON, RECTIFIER DIODE
16 A, 1200 V, SILICON, RECTIFIER DIODE
16 A, 100 V, SILICON, RECTIFIER DIODE
|
TT electronics Semelab, Ltd.
|
| 2N640004 2N6401G 2N6426G 2N6405G 2N6400 2N6401 2N6 |
Silicon Controlled Rectifier 16A 400V
Darlington Transistors NPN Silicon
Silicon Controlled Rectifiers SCRs 16 AMPERES RMS 50 thru 800 VOLTS
|
ONSEMI[ON Semiconductor]
|
|
