| PART |
Description |
Maker |
| AEPDS4M8LB-80 AEPDH4M8LB-80 AEPDS4M8LB-80S AEPDS4M |
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
x8 Page Mode DRAM Module x8页面模式内存模块
x8 Static Column Mode DRAM Module x8静态列模式DRAM模块
x8 DRAM ModuleUndefined Architecture x8内存，未定义建筑
|
Analog Devices, Inc.
TOKO, Inc.
Altera, Corp.
|
| AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode)
256K X 16 FAST PAGE DRAM, 50 ns, PDSO40
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp...
Electronic Theatre Controls, Inc.
|
| MCM40100 MCM40100S10 MCM40100S80 MCM40100SG10 MCM4 |
1M x 40 Bit Dynamic Random Access Memory Module 1M X 40 FAST PAGE DRAM MODULE, 80 ns, SMA72
16 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 1M X 40 FAST PAGE DRAM MODULE, 100 ns, SMA72
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MT8LD264G-7XS MT8LD264G-7S |
x64 EDO Page Mode DRAM Module
x64 Fast Page Mode DRAM Module X64的快速页面模式内存模
|
Micron Technology, Inc.
|
| HYM58256AP-10 |
x8 Fast Page Mode DRAM Module x8快速页面模式内存模
|
Hitachi,Ltd.
|
| HB56D236BW-7CL HB56D236SBW-7C HB56D236SBW-8C HB56D |
x36 Fast Page Mode DRAM Module x36快速页面模式内存模
|
Samsung Semiconductor Co., Ltd.
Hangzhou Silan Microelectronics Co., Ltd.
|
| GMM7321000BSG-80 GMM7321000BS-70 GMM7321000BS-60 G |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
TE Connectivity, Ltd.
|
| HYM532210ATEG-70 HYM532210ASLTE-70 HYM532210ATE-70 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Atmel, Corp.
TE Connectivity, Ltd.
|
| IBM11M2720Q-70J |
x72 Fast Page Mode DRAM Module x72快速页面模式内存模
|
Microsemi, Corp.
|
| HB56G51232SB-7CL HB56G51232SB-8CL HB56G51232B-7C |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Analog Devices, Inc.
|
