| PART |
Description |
Maker |
| NAND04GX3C2A |
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
|
http://
|
| NAND16GW3C4A NAND08GW3C4AN1E NAND16GW3C4AN1E NAND0 |
8/16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| NAND02GW4B2DN6E NAND02GW4B2DN6F NAND02G-B2D NAND02 |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
|
Numonyx B.V
|
| NAND01GR3B2BN1E NAND01GW3B2BN6E NAND01GW3B2BZA1E N |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| AT25F2048-14 |
Byte Mode and 256-byte Page Mode for Program Operations
|
ATMEL Corporation
|
| OPB992L55 OPB992P15 OPB992N11 OPB992L15 OPB990N51 |
128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-SOIC 150mil, TUBE
128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-TSSOP, T/R
128K SPI SERIAL EEPROM W/ 64-BYTE PAGE, 1.8V, -40C to 85C, 8-TSSOP, TUBE
128K SPI SERAL EEPROM W/ 64 BYTE PAGE, 1.8V, -40C to 85C, 8-PDIP, TUBE
8K SPI 1K X 8, 16B PAGE, 1.8V SER EE, -40C to 85C, 8-SOIC 150mil, TUBE
2K, 256 X 8, 1.8V SER EE, -40C to 125C, 6-SOT-23, T/R
2K, 256 X 8, 1.8V SER EE, -40C to 125C, 8-TSSOP, T/R
2K, 256 X 8, 1.8V SER EE, -40C to 85C, 8-SOIC 150mil, TUBE
|
TT electronics OPTEK Technology
Central Semiconductor, Corp.
|
| IS29GL256H-70SLA IS29GL256L-70FLA IS29GL256H-70FLV |
16-word/32-byte page read buffer
|
Integrated Silicon Solu...
|
| AT28BV64B-20SC AT28BV64B-20SI AT28BV64B-20TC AT28B |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
|
Atmel
|
| MSM511664C-60TS-K MSM511664C-70JS MSM511664C-80JS |
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
|
OKI electronic componets
|
| NAND01GW4A2BE06 NAND01GW3A2B-KGD NAND01GW4A2B-KGD |
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
|
Numonyx B.V
http://
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
|
