| PART |
Description |
Maker |
| M28F420 |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4Mb闪速存储器)
|
意法半导
|
| LH28F400BVE-TL85 LHF40V01 |
4MB (512KB x 8/256KB x 16) SmartVoltage Flash Memory(4M512Kx 8/256K位x 16)闪速存储器)
Photoelectric Sensor; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Time Range:1.5 sec. to 15 sec.; Timing Function:On-Delay and Off-Delay 4分快闪记忆体
|
Sharp Corporation
Sharp, Corp.
|
| MPC2104P MPC2105P |
(MPC2104P / MPC2105P) 256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
256KB/512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 256KB/512KB BurstRAM二级缓存模块为PowerPC制备/ CH旺平
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| FM22L16 FM22L16-55-TG |
4Mbit FRAM Memory
|
ETC
Ramtron International Corporation
|
| M5M44400CJ |
(TP) Fast Page Mode 4MBit DRAM
|
Mitsubishi
|
| XQV300 XQ2V1000 XQ2V6000 XQ18V0403 XQ2V3000 XQ18V0 |
Military 4Mbit ISP Configuration Flash PROM
|
Xilinx, Inc
|
| HMD4M1Z1-5 HMD4M1Z1-6 HMD4M1Z1 |
4Mbit(4Mx1bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
|
Hanbit Electronics Co.,Ltd
|
| HMD1M4Z1 |
4Mbit(1Mx4bit) Fast Page Mode, 1K Refresh, 20Pin ZIP, 5V Design
|
Hanbit Electronics Co.,Ltd.
|
| ES25P40 |
4Mbit CMOS 3.0 Volt Flash Memory with 75Mhz SPI Bus Interface
|
优先(苏州)半导体有限公
|
