| PART |
Description |
Maker |
| KM23C32005BG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23V32005BTY KM23V32005BETY |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23V32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C32005BG |
32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32000AG |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32000C |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| KM23C32000CET |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| AT49BV321T-85CI AT49BV321T-85TI AT49BV320T-85TI AT |
EEPROM|FLASH|2MX16|CMOS|TSSOP|48PIN|PLASTIC
Metal Film Resistor - RN 1/4 T1 18 5% A
EEPROM|FLASH|2MX16/4MX8|CMOS|TSSOP|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | TSSOP封装| 48PIN |塑料
EEPROM|FLASH|2MX16|CMOS|BGA|46PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16 |的CMOS | BGA封装| 46PIN |塑料
EEPROM|FLASH|2MX16/4MX8|CMOS|BGA|48PIN|PLASTIC 的EEPROM | FLASH动画| 2MX16/4MX8 |的CMOS | BGA封装| 48PIN |塑料
|
Microchip Technology, Inc.
Anpec Electronics, Corp.
|
| K3N6C3000E-DC |
32M-Bit (4Mx8) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位）的CMOS闪存
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY
32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
|
| CMS3216LAX-75XX |
32M(2Mx16) Low Power SDRAM
|
FIDELIX
|
| MBM29DL321TD-80 MBM29DL321TD-80PBT MBM29DL321TD-80 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation
CMOS 32M (4M x 8/2M x16) bit dual operation
|
Fujitsu Microelectronics
|
