| PART |
Description |
Maker |
| JS28F256P30B95A RD48F4000P0ZBQ0 JS28F128P30T85A TE |
Numonyx StrataFlash Embedded Memory
Numonyx?StrataFlash? Embedded Memory (P30)
|
Micron Technology
Numonyx B.V
|
| PH28F128L18T85 PH28F256L18T85 PH28F640L18T85 JZ48F |
StrataFlash Wireless Memory 无线的StrataFlash存储
StrataFlash Wireless Memory 8M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
|
Intel Corp.
Intel, Corp.
|
| 28F640J3A 28F128J3A 28F320J3A |
3 Volt Intel StrataFlash Memory(3 V 64M位英特尔StrataFlash存储
3 Volt Intel StrataFlash Memory(3 V 128M位Strata闪速存储器)
3 Volt Intel StrataFlash Memory(3 V 32M位英特尔StrataFlash存储
|
Intel Corp.
|
| GE28F128L18B85 JZ48F4000L0YTQ0 |
StrataFlash Wireless Memory 8M X 16 FLASH 1.8V PROM, 85 ns, PBGA56
StrataFlash Wireless Memory 16M X 16 FLASH 1.8V PROM, 85 ns, PBGA88
|
Intel, Corp.
|
| RC28F256J3C-125 PC28F128J3C120 JS28F256J3C125 JS28 |
Intel StrataFlash? Memory
|
Intel Corporation
|
| GE28F256L30T110 GE28F128L30B110 |
1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O (L30) 16M X 16 FLASH 1.8V PROM, 88 ns, PBGA79
1.8 Volt Intel StrataFlash Wireless Memory with 3.0-Volt I/O (L30) 8M X 16 FLASH 1.8V PROM, 88 ns, PBGA56
|
Intel, Corp.
|
| 28F640J3A |
(28FxxxJ3A) Intel StrataFlash Memory
|
Intel Corporation
|
| GE28F640K18 GE28F640K3 |
(GE28FxxxKx) Intel StrataFlash Memory (J3)
|
Intel Corporation
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
|
