PART |
Description |
Maker |
M63826FP M63826GP M63826P M63826P/FP/GP |
Transistor Array 7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
BA12003B BA12003BF BA12004B BA12001B BA12003B/BF |
Standard Linear LSIs > Transistor array High voltage high current Darlington transistor array High voltage, high current Darlington transistor array From old datasheet system
|
ROHM[Rohm]
|
LB1212 LB1213 LB1216 LB1214 LB1211 LB1217 LB1215 L |
General Purpose Transistor Array From old datasheet system Generral-Purpose Transistor Array
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
BC817U |
General Purpose Transistors - NPN Silicon AF Transistor Array for AF input stages and drivers NPN Silicon Transistor Array
|
INFINEON[Infineon Technologies AG]
|
AP0130 AP0130NA AP0130NB AP0130ND AP0132ND AP0132N |
ER 7C 7#16S PIN RECP AB 5C 5#12 PIN RECP 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 320 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 8通道阵列单片功率MOSFET N沟道增强模式 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 160 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 15 mA, 300 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode 200 V, 8 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET AB 5C 5#12 SKT RECP 8通道阵列单片功率MOSFET N沟道增强模式
|
SUTEX[Supertex Inc] Supertex Inc SUTEX[Supertex, Inc] Supertex, Inc.
|
MRF9002R2 |
MRF9002R2 1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET RF Power Field Effect Transistor Array
|
Motorola, Inc
|
VN0104N6 |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 40V V(BR)DSS | 560MA I(D) | DIP 晶体管| MOSFET的|阵| N沟道| 40V的五(巴西)直| 560MA(丁)|双酯
|
Supertex, Inc.
|
FX6ASH3 FX6ASH2 FX6UMH3 FX6VSH3 FX6SMH3 FX6KMH2 FX |
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 20A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 100V的五(巴西)直| 20A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB 晶体管| MOSFET的| P通道| 150伏五(巴西)直| 3A条(丁)| TO - 220AB现有
|
Cooper Bussmann, Inc.
|
BCV62B BCV62C BCV62 BCV62A BCV62B/T1 |
TRANSISTOR SOT-23 晶体管的SOT - 23 PNP general purpose double transistor TRANSISTOR|BJT|ARRAY|BLDGBLOCK|30VV(BR)CEO|100MAI(C)|SOT-143
|
PHILIPS[Philips Semiconductors] NXP Semiconductors
|
UPA1552H |
MOS FIELD EFFECT POWER TRANSISTOR ARRAY (FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY)
|
NEC
|
HBDM60V600W-7 |
COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER
|
Diodes Incorporated
|
NTE904 |
Integrated Circuit General Purpose Transistor Array (Two Isolated Transistors and a Darlington Connected Transistor Pair)
|
NTE[NTE Electronics]
|