| PART |
Description |
Maker |
| TC5816BFT |
16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58256FT |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
Toshiba Semiconductor
|
| TC5832FT |
32 MBIT (4M X 8 BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58NS512ADC |
512 MBit CMOS NAND EPROM
|
Toshiba
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| TC58128AFT |
128-MBIT (16M × 8 BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC58NS256DC EA10128 |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M 8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
From old datasheet system
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
Toshiba Semiconductor
|
| HY62KF0840 |
High speed, super low power and 4M bit full CMOS SRAM organized as 512K words by 8bits
|
HYNIX
|
| TC5832DC |
32 MBIT (4M x 8BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TH58512DC |
A Single 3.3V 512MBit(32M × 8Bit) CMOS NAND EEPROM(单片3.3V 512M32M × 8 CMOS NAND EEPROM)
|
Toshiba Corporation
|
| TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
| 74LVX03M |
LOW VOLTAGE CMOS QUAD 2-INPUT NAND GATE (OPEN DRAIN)
LOGIC GATE|QUAD 2-INPUT NAND|LVX-CMOS|SOP|14PIN|PLASTIC 逻辑门|输入与非| LVX全CMOS |专科| 14PIN |塑料
|
SGS Thomson Microelectronics
Bourns, Inc.
|
