| PART |
Description |
Maker |
| HYM536A410ASLM-50 HYM536A410AM-50 HYM536A410AMG-50 |
x36 Fast Page Mode DRAM Module x36快速页面模式内存模
|
NXP Semiconductors N.V.
|
| AK5364096WP60 |
x36 Fast Page Mode DRAM Module x36快速页面模式内存模
|
ADC Telecommunications
|
| MT4C4001JECJ-7/IT MT4C4001JECJ-7/XT MT4C4001JECG-8 |
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 120 ns, CDSO20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 70 ns, CDSO20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 70 ns, CDIP20
1 MEG x 4 DRAM Fast Page Mode DRAM 1M X 4 FAST PAGE DRAM, 120 ns, CZIP20
|
Austin Semiconductor, Inc
AUSTIN SEMICONDUCTOR INC
|
| MT8LD264G-7XS MT8LD264G-7S |
x64 EDO Page Mode DRAM Module
x64 Fast Page Mode DRAM Module X64的快速页面模式内存模
|
Micron Technology, Inc.
|
| MT8LDT264HG-6X MT4LDT164HG-6X MT8LDT264HG-6S MT4LD |
x64 Fast Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Micron Technology, Inc.
|
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| HYM591000BM-70 HYM591000BM-60 HYM591000BLM-70 |
x(8 1) Fast Page Mode DRAM Module
|
|
| HYM5C8256P-12 HYM5C8256M-80 |
x8 Fast Page Mode DRAM Module x8快速页面模式内存模
|
HIROSE ELECTRIC Co., Ltd.
|
| GMM791000CNS-80 |
x(8 1) Fast Page Mode DRAM Module ×8 1）快速页面模式内存模
|
NXP Semiconductors N.V.
|
| HYM532256ALM-60 HYM532256ALM-80 HYM532256ALM-70 HY |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
LG, Corp.
|
| IBM11S1320BLB-70 IBM11S1320BNA-60 IBM11S1320BNA-70 |
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
TE Connectivity, Ltd.
Vishay Intertechnology, Inc.
|
