| PART |
Description |
Maker |
| M5M51008BKR-10L M5M51008BKR-10LL M5M51008BKR-55L M |
128K X 8 STANDARD SRAM, 100 ns, PDSO32
1048576-bit (131072-word by 8-bit) CMOS static SRAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
128K X 8 STANDARD SRAM, 70 ns, PDSO32
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM
128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM
55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM
55ns; 128 x 8-bit low power CMOS static RAM
70ns; 128 x 8-bit low power CMOS static RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| P4C116-12JM P4C116-10JM P4C116-10JMB P4C116-20L28M |
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, PDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, QCC28
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 超高K × 8静态CMOS五羊
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, QCC28
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 20 ns, CDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, PDSO24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 25 ns, CDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 20 ns, PDIP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 15 ns, PDFP24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 35 ns, PDSO24
ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS 2K X 8 STANDARD SRAM, 15 ns, QCC32
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| IDT6198L IDT6198L15D IDT6198L15DB IDT6198L15L IDT6 |
CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control 16K X 4 STANDARD SRAM, 70 ns, CQCC28
LED PNL MT 9MM 6V BLACK GREEN 64K的的CMOS静态RAM6K的4位带输出）控
CABLE SMA/SMA 24 RG-142 64K的的CMOS静态RAM6K的4位带输出）控
CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control 16K X 4 STANDARD SRAM, 25 ns, CDIP24
Dual Low-Power JFET-Input General-Purpose Operational Amplifier 8-TSSOP 0 to 70 64K的的CMOS静态RAM6K的4位带输出）控
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
INTEGRATED DEVICE TECHNOLOGY INC
|
| KM6161002C KM6161002C-12 KM6161002C-15 KM6161002C- |
CMOS SRAM
64K x 16 Bit High-Speed CMOS Static RAM (5.0V Operating) Operated at Commercial and Industrial Temperature Range
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M5M5V216ART-70HI M5M5V216ART-55HI M5M5V216ATP M5M5 |
Memory>Low Power SRAM
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| M5M5V416BRT-70HI M5M5V416BTP-70HI M5M5V416BRT |
Memory>Low Power SRAM
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| IDT71256 IDT71256L IDT71256L100D IDT71256L100DB ID |
Precision Adjustable (Programmable) Shunt Reference 8-CDIP -55 to 125 的CMOS静态RAM 256K2K的8位）
Dual Pulse-Width-Modulation Control Circuit 16-SSOP 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 25 ns, CDIP28
Single UART with 16-Byte FIFOs and Auto Flow Control 44-PLCC 0 to 70 的CMOS静态RAM 256K2K的8位）
CABLE SMA/SMA 36 RG-142 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 120 ns, CDIP28
Dual-Channel Pulse-Width-Modulation (PWM) Control Circuit 16-SSOP -20 to 85 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 的CMOS静态RAM 256K2K的8位）
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDSO28
CMOS STATIC RAM 256K (32K x 8-BIT) 32K X 8 STANDARD SRAM, 30 ns, PDIP28
Replaced by TL16C550C : Single UART with 16-Byte FIFO 40-PDIP 0 to 70
Single UART with 16-Byte FIFOs and Auto Flow Control 48-LQFP 0 to 70
1.8-V to 5-V Dual UART with 16-Byte FIFOs 48-TQFP 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFO 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC 0 to 70
Replaced by TL16C550C : Single UART with 16-Byte FIFOs 44-PLCC -40 to 85
Quad Pulse-Width-Modulation Control Circuit 48-LQFP -20 to 75
CMOS Static RAM 256k ( 32k X 8-bit )
|
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Technolog...
|
| AM42DL640AG85IS AM42DL640AG AM42DL640AG25IT AM42DL |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
|
SPANSION
Advanced Micro Devices
|
| KM6161002A KM6161002A-12 KM6161002A-15 KM6161002A- |
64K x 16 Bit Speed Static RAM (5V Operating), Revolutionary Pin Out
CMOS SRAM
|
Samsung Electronic
Samsung semiconductor
|
