PART |
Description |
Maker |
2SC2059KJM 2SC2059KJN 2SC2059KJP 2SC3082KSP 2SC308 |
TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 600MA I(C) | SOT-23 晶体管|晶体管|叩| 32V的五(巴西)总裁| 600毫安一(c)| SOT - 23封装 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 25V的五(巴西)总裁| 50mA的一(c)| SOT - 23封装 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 200MA I(C) | SOT-23 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SOT-23 TRANSISTOR | BJT | NPN | 19V V(BR)CEO | 50MA I(C) | SOT-23 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR|BJT|NPN|20VV(BR)CEO|20MAI(C)|SOT-23
|
TT electronics Semelab, Ltd.
|
ZVP2106G ZVP2106GTA |
TRANSISTOR MOSFET SMD SOT 223 晶体管MOSFET的贴片采用SOT 223 SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes, Inc. Diodes Incorporated http://
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DTC124TC DTA124TC DTA1D3RE DTC1D3RE DTA114WC DTC11 |
TRANSISTOR | 50V V(BR)CEO | 30MA I(C) | SOT-23 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | TO-92VAR TRANSISTOR | SIP 晶体管| 50V五(巴西)总裁| 100mA的一c)| SOT - 23封装 TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP 晶体管| 50V五(巴西)总裁| 500mA的一(c)|园区 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR 晶体管| 50V五(巴西)总裁| 100mA的一c)|的SOT - 23VAR TRANSISTOR | 50V V(BR)CEO | 70MA I(C) | SOT-23 晶体管| 50V五(巴西)总裁|提供70mA一(c)| SOT - 23封装 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23 晶体管| 50V五(巴西)总裁| 100mA的一(c)| SOT - 23封装 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SIP 晶体管| 50V五(巴西)总裁| 100mA的一(c)|园区 TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR 晶体管| 50V五(巴西)总裁| 100mA的一(c)|的SOT - 23VAR
|
FCI Analog Devices, Inc. Rohm Co., Ltd. TE Connectivity, Ltd. Diodes, Inc. Kingbright, Corp.
|
BSR13T/R BSR14T/R |
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 800MA I(C) | SOT-23 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 800MA I(C) | SOT-23 晶体管|晶体管|叩| 40V的五(巴西)总裁| 800mA的一(c)| SOT - 23封装
|
Advanced Semiconductor, Inc.
|
MMFT3055E_D ON2223 MMFT3055E-D |
Medium Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount From old datasheet system N-hannel Enhancement-ode Logic Level SOT23
|
ON Semiconductor
|
BCX71H/E9 |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 200MA I(C) | SOT-23 晶体管|晶体管|进步党| 45V的五(巴西)总裁| 200mA的一(c)| SOT - 23封装
|
Fujitsu, Ltd.
|
BCW89T/R |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 100MA I(C) | SOT-23 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 100mA的一(c)| SOT - 23封装
|
NXP Semiconductors N.V.
|
CMPT2907AE |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | SOT-23 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 600毫安一(c)| SOT - 23封装
|
Central Semiconductor, Corp.
|
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
BC850CL BC849CL |
16Mb EDO/FPM - OBSOLETE TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SOT-23 晶体管|晶体管|叩| 30V的五(巴西)总裁| 100mA的一(c)| SOT - 23封装
|
Electronic Theatre Controls, Inc.
|
DDTC114ECA DDTC114ECA-7 DDTC124ECA DDTC124ECA-7 DD |
STIPAX PROMO; RoHS Compliant: NA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR npn型预偏置信号小的SOT - 23表面贴装晶体 NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Inc. Diodes, Inc. DIODES[Diodes Incorporated]
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