PART |
Description |
Maker |
TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位)的CMOS闪存EEPROM的(32M的8位与非的EEPROM
|
Toshiba Corporation Toshiba, Corp.
|
PDPD431636L |
1M-Bit CMOS Synchronous Fast Static RAM(1M CMOS 同步快速静态RAM) 100万位CMOS同步快速静态RAM100万的CMOS同步快速静态内存)
|
NEC, Corp.
|
NM93C06EM8 NM93C06EMT8 NM93C06EN NM93CS06EMT8 NM93 |
256-Bit Serial CMOS EEPROM (MICROWIRE?/a> Synchronous Bus) The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 16 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 Card Edge Connector; No. of Contacts:40; Pitch Spacing:0.1" RoHS Compliant: Yes 256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus) 256-BIT SERIAL CMOS EEPROM (MICROWIRE⒙ SYNCHRONOUS BUS) 256-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus) 256-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus)
|
Fairchild Semiconductor, Corp. EEPROM Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
HYS64V16300GU-7-C2 HYS64V16300GU-7.5-C2 HYS64V3222 |
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模3.332M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模.32M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
Infineon Technologies AG Infineon Technologies A...
|
TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
PD464536L PD464518L |
4M-Bit Bi-CMOS Synchronous Fast Static RAM(4M BiCMOS 同步快速静态RAM)
|
NEC Corp.
|
LH5332600 LH5332600N LH5332600T |
CMOS 32M(4M X 8/2M X 16) Mask-Programmable ROM CMOS 32M (4M X 8/2M X 16) MROM
|
Sharp Electrionic Components Sharp Corporation
|
EM68B16CWPA EM68B16CWPA-25H EM68B16CWPA-3H |
32M x 16 bit DDRII Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
K4S51153PF-YF K4S51153PF K4S51153PF-YPF1L K4S51153 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54 From old datasheet system
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
UPD4482321GF-A65 UPD4482321GF-A85 UPD4482321GF-C85 |
(UPD4482161/2181/2321/2361) 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION
|
NEC[NEC]
|
AS4C32M16D1A AS4C32M16D1A-5TCN AS4C32M16D1A-5TIN A |
32M x 16 bit DDR Synchronous DRAM Internal pipeline architecture
|
Alliance Semiconductor ...
|
MC-4532CD646EF-A10 MC-4532CD646EF-A80 MC-4532CD646 |
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|