| PART |
Description |
Maker |
| 2N7002BKW |
60 V, 310 mA N-channel Trench MOSFET 310 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| NTZD5110N NTZD5110NT1 NTZD5110NT1G NTZD5110NT5G |
Small Signal MOSFET 60 V, 310 mA, Dual N-Channel with ESD Protection 294 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
60 V, 310 mA, Dual N−Channel with ESD Protection, SOT−563
|
ON Semiconductor
|
| ISL9N308AP3 ISL9N308AS3ST |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8mOhm
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8m ?
N-CHANNEL LOGIC LEVEL ULTRAFET TRENCH MOSFETS 30V, 75A, 8M з
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 8m з 75 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| ISL9N308AD3 ISL9N308AD3ST ISL9N308AD3STNL |
N-Channel Logic Level UltraFET R Trench Power MOSFETs 30V, 50A, 8mOhm
N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mз 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mз 50 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FDA2712 |
N-Channel UltraFET Trench MOSFET 250V, 64A, 34mOhms
N-Channel UltraFET Trench MOSFET 250V, 64A, 34mΩ
|
Fairchild Semiconductor
|
| GWM220-004P3 |
Three phase full bridge with Trench MOSFETs in DCB isolated high current package 220 A, 40 V, 0.0035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| PAK-II |
310 Ivy Glen Court
|
Electronic Theatre Controls, Inc.
|
|
