| PART |
Description |
Maker |
| BCM5651 |
StrataXGS TM INTEGRATED MULTI-LAYER SWITCH
|
Broadcom Corp.
|
| NTE1056 NTE1449 NTE1453 NTE1862 NTE347 |
Integrated Circuit FM Stereo Multiplex Demodulator
Integrated Circuit Low Noise Eqalizer Amp
Integrated Circuit 2−Channel, Low Noise, Equalizier Amp
Integrated Circuit TV Vertrical Deflection Circuit
Silicon NPN Transistor
|
NTE[NTE Electronics]
|
| ATR4253 ATR4253-PVPW |
Highly Integrated - All-in-one Active Antenna IC Integrated AGC
SPECIALTY TELECOM CIRCUIT, QCC16
|
ATMEL Corporation
|
| ICS9248-128 ICS9248YF-128 AV9248F-128 |
Frequency generator and integrated buffer
Single Chip, SIS 530/620 System Clock with AMD 533MHz Freq. and Overclocking
Frequency Generator & Integrated Buffers
133.3 MHz, PROC SPECIFIC CLOCK GENERATOR, PDSO48 0.300 INCH, SSOP-48
Frequency Generator & Integrated Buffers
|
ICST[Integrated Circuit Systems]
Integrated Device Technology, Inc.
|
| ICS9248-135 ICS9248YF-135-T AV9248F-135-T |
Frequency generator and integrated buffer for Celeron and Pentium II/III ,K6
Frequency Generator & Integrated Buffers for Celeron & PII/III⑩& K6
Single Chip, SIS 540/630 System Clock with up to 166MHz
Frequency Generator & Integrated Buffers for Celeron & PII/III& K6
Frequency Generator & Integrated Buffers for Celeron & PII/III? K6
|
ICST[Integrated Circuit Systems]
|
| MCF5274 MCF5275 MCF5275LCVM166 |
V2 ColdFire® Integrated Microprocessor
MCF5275 Integrated Microprocessor Family Hardware Specification
|
Freescale (Motorola)
|
| STK1060 |
INTEGRATED EMITTER RESISTOR THICK FILM FILM HYBRID INTEGRATED CIRCUIT
|
SANYO[Sanyo Semicon Device]
|
| U4089B U4089B-M U4089B-MFN U4089B-MFNG3 |
Monolithic Integrated Feature Phone IC
MONOLITHIC INTEGRATED FEATUREPHONE CIRCUIT
|
ATMEL[ATMEL Corporation]
|
| KA22293 KA22293Q KA2293 |
LINEAR INTEGRATED CIRCUIT
MONOLITHIC INTEGRATED CIRCUIT FOR MUSIC CENTER
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| KA2293 KA2293D KA22293Q KA22293 |
MONOLITHIC INTEGRATED CIRCUIT FOR MUSIC CENTER
LINEAR INTEGRATED CIRCUIT
|
SAMSUNG[Samsung semiconductor]
|
| FDFMA2P85708 FDFMA2P857 |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.0A, 120m惟
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.0A, 120mΩ
|
Fairchild Semiconductor
|
