| PART |
Description |
Maker |
| BCM5248 BCM5651 BCM5464 |
StrataXGS® Multilayer Switch
STRATAXGS TM INTEGRATED MULTI-LAYER SWITCH
|
BOARDCOM[Broadcom Corporation.]
|
| BCM5651 |
StrataXGS TM INTEGRATED MULTI-LAYER SWITCH
|
Broadcom Corp.
|
| BCM5665 |
STRATAXGS BCM5665 INTEGRATED MULTI-LAYER SWITCH
|
Broadcom Corp.
|
| NTE1056 NTE1449 NTE1453 NTE1862 NTE347 |
Integrated Circuit FM Stereo Multiplex Demodulator
Integrated Circuit Low Noise Eqalizer Amp
Integrated Circuit 2−Channel, Low Noise, Equalizier Amp
Integrated Circuit TV Vertrical Deflection Circuit
Silicon NPN Transistor
|
NTE[NTE Electronics]
|
| AT97SC3201NBSP |
A Fully integrated security module designed to be integrated into computer systems and other embedde
|
Atmel Corp
|
| AS82181 AS8218BLQS AS8228BLQS AS8218BLQW AS8228BLQ |
Highly Integrated Single Phase 2 Current Energy Metering Integrated Circuits
|
ams AG
austriamicrosystems AG
|
| MRFIC0913 |
900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
|
| AS8218 AS8228 |
Highly Integrated Single Phase 2-Current Energy Metering Integrated Circuits with Microcontroller, RTC, Programmable Multi-Purpose I/Os and LCD Driver
|
AMSCO[austriamicrosystems AG]
|
| STK1060 |
INTEGRATED EMITTER RESISTOR THICK FILM FILM HYBRID INTEGRATED CIRCUIT
|
SANYO[Sanyo Semicon Device]
|
| KA22293 KA22293Q KA2293 |
LINEAR INTEGRATED CIRCUIT
MONOLITHIC INTEGRATED CIRCUIT FOR MUSIC CENTER
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| FDFMA2P85708 FDFMA2P857 |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.0A, 120m惟
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.0A, 120mΩ
|
Fairchild Semiconductor
|
