PART |
Description |
Maker |
FLL1200IU-2 |
L-Band Medium & High Power GaAs FET L BAND, GaAs, N-CHANNEL, RF POWER, JFET L-Band Medium & High Power GaAs FET
|
Fujitsu Component Limited. Fujitsu, Ltd. Fujitsu Limited
|
FLL300IL-1 FLL300IL-2 FLL300IL-3 |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
FLL400IP-2 |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
FLL300IL-2 FLL300IL-3 |
L-Band Medium & High Power GaAs FET
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
FLL107ME |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
FLL200IB-1 FLL200IB-3 |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
|
Eudyna Devices
|
APT-18649R APT18-2735 APT18-2730R APT-4074R |
6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
HIROSE ELECTRIC Co., Ltd. Agilent Technologies, Inc. Advanced Interconnections, Corp. AGILENT TECHNOLOGIES INC
|
MGFC5218 C5218A |
18000 MHz - 19000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER From old datasheet system K-Band 2-Stage Power Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
RF7206 |
1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 3 X 3 MM, 1 MM HEIGHT, ROHS COMPLIANT PACKAGE-10 3 V W-CDMA BAND 2 LINEAR PA MODULE
|
RF Micro Devices
|
LD7126 LD7126SERIES |
DBS-Band, 2.0KW/2.4KW Klystrons for Communications 17 GHz BAND, 2.0 kW/2.4 kW, HIGH EFFICIENCY, HIGH POWER GAIN 17 GHz BAND / 2.0 kW/2.4 kW / HIGH EFFICIENCY / HIGH POWER GAIN
|
NEC[NEC] NEC Corp.
|
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC ROHM[Rohm]
|
ANP1800M2-23 L735A L1300 ANP2300M12-10 |
1700 MHz - 1800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER HERMETIC SEALED, CASE S003 735 MHz - 765 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 1215 MHz - 1365 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 2200 MHz - 2300 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
Sumida, Corp.
|