| PART |
Description |
Maker |
| V53C511816502K-60I V53C511816502ST-60 V53C51181650 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Ecliptek, Corp.
|
| UPD424210G5-60-7JF UPD424210G5-60-7JF-G UPD424210L |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
FIBOX
|
| GM71VS65163CLT-6 GM71VS65163CLJ-5 GM71VS65163CLJ-6 |
x16 EDO Page Mode DRAM
|
|
| HY5118164CSLTC-80 HY5118164CTC-70 HY5118164CSLJC-7 |
x16 EDO Page Mode DRAM
|
|
| AS4LC256K16E0-35JC AS4LC256K16E0-35TC AS4LC256K16E |
3.3V 256K x 16 CM0S DRAM (EDO), 60ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 45ns RAS access time
3.3V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
x16 EDO Page Mode DRAM
|
Alliance Semiconductor
|
| MSM51V4265 MSM51V4265E MSM51V4265E-70TS-K |
256K X 16 EDO DRAM, 70 ns, PDSO40
DRAM / FAST PAGE MODE TYPE
262,144-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
LAPIS SEMICONDUCTOR CO LTD
OKI electronic componets
|
| HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834 |
8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hynix Semiconductor, Inc.
NXP Semiconductors N.V.
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 |
2M x 8 Bit 2k 5 V 60 ns EDO DRAM
2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IS41LV16256-35K IS41LV16256-35T IS41LV16256-60K IS |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 60 ns, PDSO40
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K X 16 EDO DRAM, 35 ns, PDSO40
|
Integrated Silicon Solu...
Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| MSM5116405C MSM5116405C-50TS-L |
4M X 4 EDO DRAM, 50 ns, PDSO24
4M×4 Dynamic RAM(4M×4动态RAM) 4米4动态RAM米4动态内存）
From old datasheet system
4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
|
OKI ELECTRIC INDUSTRY CO LTD
OKI SEMICONDUCTOR CO., LTD.
|
