| PART |
Description |
Maker |
| K4H1G0438A-UC/LA2 K4H1G0838A-UC/LA2 K4H1G0438AUC/L |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
1Gb A-die SDRAM Specification
|
Cypress Semiconductor, Corp.
Samsung semiconductor
|
| K4D261638F-TC33 K4D261638F-TC25 K4D261638F-TC40 K4 |
128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
8M X 16 DDR DRAM, 0.55 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
|
| TSHA4400 |
3 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
VISHAY SEMICONDUCTORS
|
| SR5406 |
303.875 MHz One Port SAW Resonator
|
Vanlong Technology Co., Ltd.
|
| TSHA550009 |
Infrared Emitting Diode, 875 nm, GaAlAs
|
Vishay Siliconix
|
| TSHA5500 TSHA550008 TSHA5501 TSHA5502 TSHA5503 |
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
|
Vishay Siliconix
|
| HYB39S256407FF-7 |
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 0.400 X 0.875 INCH, 0.80 MM PITCH, GREEN, PLASTIC, TSOP2-54
|
Infineon Technologies AG
|
| MAX1910EUB MAX1912 MAX1910 MAX1910EUBT |
1.5x/2x High-Efficiency White LED Charge Pumps SWITCHED CAPACITOR REGULATOR, 875 kHz SWITCHING FREQ-MAX, PDSO10
|
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
|
| 1301800311 |
1 1/4 Cord Grip Grommet, F5 Body Size 19.05-22.23mm (.750-.875) Cord Diameter
|
Molex Electronics Ltd.
|
| 1301800310 |
1 1/4 Cord Grip Grommet, F5 Body Size 19.05-22.23mm (.750-.875) Cord Diameter
|
Molex Electronics Ltd.
|
| 1301800308 |
1 1/4 Cord Grip Grommet, F5 Body Size 19.05-22.23mm (.750-.875) Cord Diameter
|
Molex Electronics Ltd.
|
|
