PART |
Description |
Maker |
TC55V2001FI TC55V2001FI-10 TC55V2001FI-10L TC55V20 |
262,144-WORD BY 8-BIT STATIC RAM 262,144 - Word位静态RAM 262,144-Word By 8-Bit Static RAM(262,144× 8位高速静态RAM) 262,144 - Word位静态RAM62144字8位高速静态RAM)的
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation Toshiba, Corp.
|
VSC3040 |
11 Gbps 144 144 Asynchronous Crosspoint Switch
|
Vitesse Semiconductor Corporation.
|
M67798LRA 67798LRA M67798 |
From old datasheet system 144-148MHz / 9.6V / 8W / FM PORTABLE RADIO 144-148MHz, 9.6V, 8W, FM PORTABLE RADIO 144 - 148MHz.6V的,瓦特短波,调频便携式收音
|
Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
AK4864G AK4864S AK4864W AK4864Z AK69256S AK688192Z |
262,144 X 8 Bit MOS Dynamic Random Access Memory 262,144 × 8位马鞍山动态随机存取存储器
|
Accutek Microcircuit Corporation Accutek Microcircuit, Corp.
|
IS28F020BVB-120T IS28F020BVB-120TI IS28F020BVT-120 |
262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ** MISC CRYSTALS ** CRYSTAL 9.8304MHZ 20PF SMD G1 NON-802.15.4 2.4GHZ 262,144 × 8 SmartVoltage引导块闪
|
Integrated Silicon Solution, Inc.
|
HYB25M144180C HYB25R144180C HYB25M128160C |
144-Mbit direct RDRAM(144 Mbit 直接 RDRAM) 144-MBit Direct RDRAM(144 M位直接RDRAM) 144兆位的直接的RDRAM144米位直接的RDRAM 128-Mbit direct RDRAM(128 Mbit ?存? RDRAM)
|
SIEMENS AG
|
HM514260CJ-8 HM514260CLJ-7 HM514260CLJ-8 HM514260C |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 262,144-WORD X 16-BIT DYNAMIC RANDOM ACCESS MEMORY 60ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
HITACHI[Hitachi Semiconductor]
|
M67798LA 67798LA M67798 |
144-148MHz / 9.6V / 8W / FM PORTABLE RADIO From old datasheet system 144-148MHz, 9.6V, 8W, FM PORTABLE RADIO
|
Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HM514260LTT-10 HM514260LTT-7 HM514260LTT-8 HM51426 |
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory 80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
MT49H8M32BM-4 MT49H8M32FM-4 |
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, LEAD FREE, MICRO, BGA-144 8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, MICRO, BGA-144
|
NEC, Corp.
|
M3H71FAD-R M3H15TDD M3H52TCD-R MH75FBD MH75FAG MH7 |
8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator 16-bit, 75 MIPS, 2.5v, 2 serial ports, host port, 80 KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Ind 16-Bit, 80MIPS, 1.8V, 2 Serial Ports, Host Port, 20KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Comm. 16-Bit, 80MIPS, 1.8V, 2 Serial Ports, Host Port, 80KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Ind 16-Bit, 80MIPS, 1.8V, 2 Serial Ports, Host Port, 80KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Comm. 16-Bit, 75 MIPS, 2.5V, 2 Serial Ports, Host Port, 40 KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Comm. 500 MHz TigerSHARC Processor with 12 Mbit on-chip embedded DRAM; Package: 576 ball SBGA; No of Pins: 576; Temperature Range: Ind 300 MHz TigerSHARC Processor with 6 Mbit on-chip SRAM; Package: 625 ball BGA; No of Pins: 625; Temperature Range: Ind 500 MHz TigerSHARC Processor with 12 Mbit on-chip embedded DRAM; Package: BGA THERM ENH W/ HEATSINK; No of Pins: 576; Temperature Range: Ind 300 MHz TigerSHARC Processor with 6 Mbit on-chip SRAM; Package: 484 ball BGA; No of Pins: 484; Temperature Range: Ind 8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator
|
MTRONPTI
|
FQFP144 FQFP-144 |
144 Pin Plastic
|
Fujitsu
|