| PART |
Description |
Maker |
| STB25NM50N-1 STF25NM50N STW25NM50N STP25NM50N STB2 |
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 500V - 0.11楼? - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 500V - 0.11ヘ - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| TW2880 |
Advanced Multi-Channel HD Display/Record/Playback Controller IC for Next Generation 16-Channel DVR Applications
|
Intersil Corporation
|
| STD11NM60N STF11NM60N STB11NM60N-1 STP11NM60N STD1 |
N-channel 600V - 0.37楼? - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh垄芒 Power MOSFET
N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh Power MOSFET
N-channel 600V - 0.37Ω - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
|
| APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
|
Advanced Power Technology Ltd.
|
| STF10NM65N STD10NM65N STP10NM65N STU10NM65N |
N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh?/a> Power MOSFET
N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh Power MOSFET
N-channel 650 V - 0.43 ヘ - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| M5LV-320_192-10AI M5LV-512_104-6AC M5-192_74-15YC |
IND SHLD 3.3UH 9A RMS SMT
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PBGA256
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP144
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP208
10-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 12 ns, PQFP144
12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Commercial EE PLD, 15 ns, PQFP144
12-Bit Broadband Modem Mixed Signal Front End (MxFE®); Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial EE PLD, 15 ns, PQFP144
Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP240
CONNECTOR ACCESSORY EE PLD, 10 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 7.5 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 20 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA352
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP160
Fifth Generation MACH Architecture EE PLD, 12 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 10 ns, PBGA256
Fifth Generation MACH Architecture EE PLD, 15 ns, PQFP240
Fifth Generation MACH Architecture EE PLD, 6.5 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 20 ns, PQFP208
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP208
CONNECTOR ACCESSORY EE PLD, 12 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 5.5 ns, PQFP100
Fifth Generation MACH Architecture EE PLD, 10 ns, PQFP240
Fifth Generation MACH Architecture
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| APT6025BFLL APT6025SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 24A 0.250 Ohm
|
Advanced Power Technology, Ltd.
|
| APT10043 APT10043JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 1000V 22A 0.430 Ohm
|
Advanced Power Technolo...
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT8030JVFR_05 APT8030JVFR APT8030JVFR05 |
25 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
| APT10021JLL_04 APT10021JLL APT10021JLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
|
