| PART |
Description |
Maker |
| V62C2161024LL-55T V62C2161024LL-85T V62C2161024L V |
64K X 16 STANDARD SRAM, 100 ns, PDSO44
Ultra Low Power 64K x 16 CMOS SRAM 超低功4K的16 CMOS SRAM
|
MOSEL-VITELIC
Mosel Vitelic Corp
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
|
| BS616UV1010EIP10 BS616UV1010DIG10 BS616UV1010AI10 |
Ultra Low Power CMOS SRAM 64K X 16 bit 超低功耗CMOS SRAM 64K的16
|
BRILLIANCE SEMICONDUCTOR, INC.
|
| MCM63P631TQ4.5R MCM63P631TQ8R MCM63P631TQ7R |
64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM 64K X 32 CACHE SRAM, 8 ns, PQFP100
64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM 64K X 32 CACHE SRAM, 4.5 ns, PQFP100
64K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM 64K X 32 CACHE SRAM, 7 ns, PQFP100
|
Motorola, Inc.
TE Connectivity, Ltd.
Motorola Mobility Holdings, Inc.
|
| HT6264 HT6264-70DIP |
CMOS 8K x 8-Bit SRAM
IC-64K CMOS SRAM
|
http://
Holtek Semiconductor Inc
|
| KM6161002C KM6161002C-12 KM6161002C-15 KM6161002C- |
CMOS SRAM
64K x 16 Bit High-Speed CMOS Static RAM (5.0V Operating) Operated at Commercial and Industrial Temperature Range
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MB81C78A |
CMOS 64K-Bit High Speed SRAM
|
Fujitsu
|
| BS616LV1010AI55 BS616LV1010ECG70 BS616LV1010DIP55 |
Very Low Power CMOS SRAM 64K X 16 bit
|
Brilliance Semiconductor
|
| LY61L6416E LY61L6416GL LY61L6416GV LY61L6416I LY61 |
64K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| MB81C71A |
CMOS 64K-Bit High Speed SRAM
|
Fujitsu
|
| LY62L6416ML-45LLT LY62L6416ML-45SLET LY62L6416ML-4 |
64K X 16 BIT LOW POWER CMOS SRAM
|
Lyontek Inc.
|
| AS6C1016-55BIN AS6C1016-55ZIN |
64K X 16 BIT LOW POWER CMOS SRAM
|
List of Unclassifed Manufacturers
|
| UPD444001 UPD444001LE-11 UPD444001LE-10 UPD444001L |
4M X 1 STANDARD SRAM, 11 ns, PDSO32
4M-BIT CMOS FAST SRAM 4M-WORD BY 1-BIT 4分位CMOS SRAM的快速分1
|
NEC Corp.
NEC, Corp.
|
