| PART |
Description |
Maker |
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
| B1821BH075C300N B1821BH075C275N B1821BH038C275N B1 |
Cap Screws Cont
|
Fastenal
|
| AS3668 AS3668-BQFT |
4 Channel Breathl ight Cont rol ler
|
austriamicrosystems AG
|
| SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| NJU26105 |
AGC/eala BASS/T.cont/PEQ/Vol./HPF / QFP32-R1
|
JRC
|
| MC44604 |
High Safety Standby Ladder Mode GreenLine PWM Cont
|
ON Semiconductor
|
| VS-T90RIA100 YA200KT20 T7RYA201KT20 |
SCR PHASE CONT 1000V 90A D-55
T..RIA Series Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A
|
Vishay Semiconductors
|
| 5-583294-2 |
.156 Centerline Connectors (AMP-LEAF); CONT AMP LEAF L/P 15 AU ( Tyco Electronics )
|
Tyco Electronics
|
| 19003-0045 19023-0056 |
.250X.032 94V-0 FEM. FIQD CONT (BB-2206V 2 mm2, PUSH-ON TERMINAL
MALE FIQD 14-16 AWG LOOSE 2 mm2, TAB TERMINAL
|
Molex, Inc.
|
