| PART |
Description |
Maker |
| IS67WVE4M16ALL IS66WVE4M16ALL |
1.8V Core Async/Page PSRAM
|
Integrated Silicon Solution, Inc
|
| IS66WVE1M16ALL-70BLI |
1.8V Core Async/Page PSRAM
|
Integrated Silicon Solution, Inc
|
| IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16
16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu...
Integrated Silicon Solution, Inc.
Intersil, Corp.
Integrated Circuit Solution...
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| AT49SV12804 AT49SV12804-70TI AT49SN12804 |
128-megabit (8M x 16) Burst/Page Mode 1.8-volt Flash Memory
|
Atmel Corp.
|
| AT49SN6416 |
64M bit and 32M, 1.8-Volt Burst and Page Mode Flash Memory
|
Atmel Corp
|
| UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access
8K x 8 CMOS SRAM
|
United Microelectronics Corporation
ETC
UMC[UMC Corporation]
|
| IS42S16800A1-7TL |
8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc.
|
| 2450BM15B0009 |
2.45 GHz Impedance Matched Balun-Filter: Optimized for CEL ZIC2410 Chipset
|
Johanson Technology Inc...
|
| IS45S16800B IS45S16800B-7TA IS45S16800B-7TA1 IS45S |
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
| 42S16800A IS42S16800A IS42S16800A-6T IS42S16800A-7 |
16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution Inc
|
| GS78108A |
8Mb Async SRAMs
|
GSI Technology
|
