| PART |
Description |
Maker |
| AM29BDS643GT5KVAI AM29BDS643GT7KVAI AM29BDS643GT5G |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory 64兆位个M x 16位）的CMOS 1.8伏，只有同时写，突发模式闪存
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| S29CD-J S29CL032J S29CD016J S29CD016J0JFAI000 S29C |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
|
SPANSION[SPANSION]
|
| AT49SN6416T |
64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory
|
Atmel Corp.
|
| AM29BL802CB-90RZK AM29BL802CB-65RZK AM29BL802CB-90 |
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only Burst Mode Flash Memory
|
SPANSION[SPANSION]
AMD[Advanced Micro Devices]
|
| BS640GTD9V AM29BDS640G AM29BDS640GBC3WSI AM29BDS64 |
64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
|
AMD[Advanced Micro Devices]
|
| AM29BDS323DT11AWKI |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write/ Burst Mode Flash Memory
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
|
Advanced Micro Devices, Inc.
|
| AM29BDS643GT7GVAI AM29BDS643GT5MVAI AM29BDS643GT7M |
64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
|
AMD[Advanced Micro Devices]
SPANSION[SPANSION]
|
| S29WS-J WS128J0PBFW11 S29WS064J0PBAW00 S29WS064J0P |
128/64 Megabit (8/4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
|
SPANSION[SPANSION]
|
| S29CL016J0JDGH034 S29CL016J0MDGH137 S29CD016J0JDGH |
16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
|
SPANSION[SPANSION]
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc.
SPANSION LLC
|
| AM29BL802CB80DWH1 AM29BL802CB80DTH1 AM29BL802CB80D |
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1 8兆位12亩16位）.0伏的CMOS只，突发性，引导扇区闪存模式模修
|
Spansion Inc.
Spansion, Inc.
|
| EN71NS128B0-7DCWP EN71NS128B011 |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM
|
Eon Silicon Solution Inc.
|
