PART |
Description |
Maker |
TC58V64AFTI |
64M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
TC58V16BFT |
16M-Bit CMOS NAND Flash EPROM
|
Toshiba Semiconductor
|
K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
TC58NVG0S3AFT05 |
1 GBIT (128M × 8 BITS) CMOS NAND EEPROM
|
Toshiba. Toshiba Semiconductor
|
K9K4G08U1M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
SAMSUNG
|
K9K1G16U0A |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M的8 64米16位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
K9F1G08D0M K9F1G08Q0M K9F1G16D0M K91G08Q0M K9F1G16 |
64MB & 128MB SmartMediaTM Card 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9K1G08U0B K9K1G08B0B K9K1G08R0B |
128M x 8 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
TC58NS100DC |
1 GBit CMOS NAND EPROM
|
Toshiba
|
TC58NS512ADC |
512 MBit CMOS NAND EPROM
|
Toshiba
|
TC58NS128BDC |
128 MBit CMOS NAND EPROM
|
Toshiba
|
MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32 Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes IC DRIVER 1/2BRDG LOW SIDE 16DIP DIODE SCHTTKY 150V 2X30A TO247AD
|
Macronix International Co., Ltd.
|