| PART |
Description |
Maker |
| TLP908 TLP908LB |
POSITION, LINEAR SENSOR-DIFFUSE, 0.5-1.5mm, 0.50-0.75mA, RECTANGULAR, THROUGH HOLE MOUNT
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTO TRANSISTOR PHOTOREFLECTIVE传感器红外发光二极管光敏三极
PHOTOREFLECTIVE SENSORS INFRARED LED PHOTOTRANSISTOR
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| IRA-E940ST1 IRA-E420 IRA-E420QW1 IRA-E420S1 IRA-E4 |
Pyroelectric Infrared Sensors
|
MURATA[Murata Manufacturing Co., Ltd.]
|
| SIR-341ST3F |
Sensors > Infrared Light Emitting Diodes
|
ROHM
|
| TSL262R TSL260R TSL261R |
INFRARED LIGHTTOVOLTAGE OPTICAL SENSORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| SIR-568ST3F |
Sensors > Infrared Light Emitting Diodes
|
ROHM
|
| PS-R11L PS-R11D |
Paper sensors(photo switches are composed of a modulated infrared emitting) 纸传感器（附图开关由一个红外发射调制）
|
Kondenshi Corp
KODENSHI[KODENSHI KOREA CORP.]
KODENSHI CORP.
KODENSHI, CORP.
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| AA3528AF3C |
2.4 mm, 1 ELEMENT, INFRARED LED, 940 nm
3.5x2.8 mm INFRARED EMITTING DIODE
|
Kingbright Corporation
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
| MTE100 MTE1100 |
GaAs INFRARED EMITTER INFRARED LED FOR PHOTO SENSOR
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| ADNB-6002 |
Agilent Optical Mouse Sensors (LED-based Sensors) Selection Guide
|
AVAGO TECHNOLOGIES LIMITED
|
