| PART |
Description |
Maker |
| 2FAG-M12R |
Integrated Passive & Active Devices
|
Bourns, Inc.
|
| 2FAF-M8R |
Integrated Passive & Active Devices
|
Bourns, Inc.
|
| 2FAL-M16R |
Integrated Passive & Active Devices
|
Bourns, Inc.
|
| 2FAG-M12R |
Integrated Passive & Active Devices
|
BOURNS[Bourns Electronic Solutions]
|
| AMZ-2.51G AIZ-802 RHOMBUSINDUSTRIESINC-AIZ-802J AI |
PASSIVE DELAY LINE, TRUE OUTPUT, DSO8 LOW PROFILE, SMD-8
PASSIVE DELAY LINE, TRUE OUTPUT, DIP14
PASSIVE DELAY LINE, TRUE OUTPUT, DSO14
|
Rhombus Industries, Inc.
RHOMBUS INDUSTRIES INC
|
| MDX-MN0204 MDX-MNMM02 MDX-MNWM02 MDX-MN0102 MDX-MN |
WaveReady?/a> Passive, LGX-compatible Shelves
WaveReady Passive, LGX-compatible Shelves
WaveReady垄芒 Passive, LGX-compatible Shelves
WaveReady⑩ Passive, LGX-compatible Shelves
|
http://
JDS Uniphase Corporation
|
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| LM10V335 |
Passive Matrix Color LCD Module (640x480 dots)
DEVICE SPECIFICATION for Passive Matrix Color LCD Module
|
SHARP[Sharp Electrionic Components]
|
| NANOSMDC016F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
|
