| PART |
Description |
Maker |
| MT29F2G16AADWPDTR |
2Gb x8, x16: NAND Flash Memory
|
Micron Technology
|
| NAND512-M NAND512W3M2 NAND512R4M3 NAND512R4M5 NAND |
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP 同一封装内整合了256/512Mb/1Gb（x8/x16.8/3V28字节页）NAND闪存以及256/512Mb（x16/x32.8V的）LPSDRAM的MCP
|
意法半导
STMicroelectronics N.V.
|
| NAND01G-N NAND01GR3N6 NAND01GR4N5 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
Electronic Theatre Controls, Inc.
|
| K9T1G08U0M |
128M x 8 Bits NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
| SST39VF3201-90-4I-EK SST39VF6401-90-4I-EK SST39VF1 |
10-Element Bar Graph Array
CAT5E PATCH CORD 100MHZ 4 FOOT WHITE
CAT5E PATCH CORD 30 FOOT BLACK
CAT5E PATCH CORD 100MHZ 1 FOOT WHITE
QF50 SRf DIN 41651 Std LoPro 34Ckt
CAT5E PATCH CORD 50 FOOT BLACK
LED Light Bars
CAT5E PATCH CORD 100MHZ 3 FOOT WHITE
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
SCOPEMETER 200MHz, 2.5GS/s,B/W with SCC kit, Z540 CALIBRATION RoHS Compliant: NA 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
CAT5E PATCH CORD 30 FOOT BLACK 4M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
KJL 41C 41#20 PIN RECP 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 90 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 1M X 16 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 4M X 16 FLASH 2.7V PROM, 70 ns, PDSO48
|
Silicon Storage Technology, Inc.
PROM
SILICON STORAGE TECHNOLOGY INC
|
| MT29F2G08AABWP MT29F8G08FABWP MT29F4G16BABWP |
(MT29FxGxxBxBWP) 8Gb x8/x16 Multiplexed NAND Flash Memory
|
Micron Technology
|
| HYS72D256020GR-8-A HYS72D256020GR-7-A HYS72D128020 |
2GB (256Mx72) PC1600 2-bank available 3Q02
2GB (256Mx72) PC2100 2-bank available 3Q02
128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 DIMM-184
|
Infineon Technologies AG
|
| NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND51 |
32M X 16 FLASH 3V PROM, 12000 ns, PDSO48
64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES
64M X 8 FLASH 3V PROM, 12000 ns, PDSO48
128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
|
STMicroelectronics
NUMONYX
|
| K9K2G0816QU0M |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet
|
Samsung Electronic
|
| K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M- |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
|
